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IRFZ34NPBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRFZ34NPBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ± 20 V with a gate-source threshold of 1.0 to 2.5 V.
2 D passive Drain terminal, rated for a drain-source voltage of 60 V and a continuous drain current of 50 A at TC = 25 °C, with the current limited by the package.
3 S passive Source terminal, which carries the body diode with a continuous source-drain diode current of 50 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IRFZ34NPBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfz34npbf-vb-etched.step / irfz34npbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfz34npbf-vb.step / irfz34npbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 628d2bb3fbc460d4, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF