# IRFU9220PBF

**Vishay Intertech** · MOSFETs · TO-251-3

IRFU9220PBF from Vishay Intertech, in a TO-251-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a maximum gate-source voltage of ±20 V with a threshold of -2.0 to -4.0 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -200 V and continuous ID of -3.6 A at TC = 25 °C, and connected to the mounting tab. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous body-diode current IS of -3.6 A and pulsed ISM of -14 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-251-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | -200 | V | TC = 25 °C | 1 |
| Gate-source voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | -3.6 | A | VGS at -10 V, TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | -2.3 | A | VGS at -10 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM |  |  | -14 | A | Repetitive rating; pulse width limited by max junction temperature | 1 |
| Single pulse avalanche energy | EAS |  |  | 310 | mJ | VDD = -50 V, starting TJ = 25 °C, L = 35 mH, Rg = 25 Ω, IAS = -3.6 A | 1 |
| Repetitive avalanche current | IAR |  |  | -3.6 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 4.2 | mJ |  | 1 |
| Maximum power dissipation | PD |  |  | 42 | W | TC = 25 °C | 1 |
| Maximum power dissipation (PCB mount) | PD |  |  | 2.5 | W | TA = 25 °C | 1 |
| Linear derating factor |  |  |  | 0.33 | W/°C |  | 1 |
| Linear derating factor (PCB mount) |  |  |  | 0.02 | W/°C |  | 1 |
| Peak diode recovery dV/dt | dV/dt |  |  | -5 | V/ns | ISD ≤ -3.9 A, dI/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering recommendations (peak temperature) |  |  |  | 260 | °C | For 10 s, 1.6 mm from case | 1 |
| Maximum junction-to-ambient | RthJA |  |  | 110 | °C/W |  | 2 |
| Maximum junction-to-ambient (PCB mount) | RthJA |  |  | 50 | °C/W | When mounted on 1" square PCB | 2 |
| Maximum junction-to-case (drain) | RthJC |  |  | 3 | °C/W |  | 2 |
| Drain-source breakdown voltage | VDS | -200 |  |  | V | VGS = 0 V, ID = -250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | -2 |  | -4 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | -100 | μA | VDS = -200 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | -500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 1.5 | Ω | VGS = -10 V, ID = -2.2 A | 2 |
| Forward transconductance | gfs | 1.1 |  |  | S | VDS = -50 V, ID = -2.2 A | 2 |
| Total gate charge | Qg |  |  | 20 | nC | VGS = -10 V, ID = -3.9 A, VDS = -160 V | 2 |
| Gate-source charge | Qgs |  |  | 3.3 | nC | VGS = -10 V, ID = -3.9 A, VDS = -160 V | 2 |
| Gate-drain charge | Qgd |  |  | 11 | nC | VGS = -10 V, ID = -3.9 A, VDS = -160 V | 2 |
| Continuous source-drain diode current | IS |  |  | 3.6 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 |
| Pulsed diode forward current | ISM |  |  | 14 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 |
| Body diode voltage | VSD |  |  | 6.3 | V | TJ = 25 °C, IS = -3.6 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr |  | 150 | 300 | ns | TJ = 25 °C, IF = -3.9 A, dI/dt = 100 A/μs | 2 |
| Body diode reverse recovery charge | Qrr |  | 0.97 | 2 | μC | TJ = 25 °C, IF = -3.9 A, dI/dt = 100 A/μs | 2 |
| VDS temperature coefficient | ΔVDS/TJ |  | -0.22 |  | V/°C | Reference to 25 °C, ID = -1 mA | 2 |
| Input capacitance | Ciss |  | 340 |  | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 |
| Output capacitance | Coss |  | 110 |  | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 |
| Reverse transfer capacitance | Crss |  | 33 |  | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 |
| Turn-on delay time | td(on) |  | 8.8 |  | ns | VDD = -100 V, ID = -3.9 A, Rg = 18 Ω, RD = 24 Ω | 2 |
| Rise time | tr |  | 27 |  | ns | VDD = -100 V, ID = -3.9 A, Rg = 18 Ω, RD = 24 Ω | 2 |
| Turn-off delay time | td(off) |  | 7.3 |  | ns | VDD = -100 V, ID = -3.9 A, Rg = 18 Ω, RD = 24 Ω | 2 |
| Fall time | tf |  | 19 |  | ns | VDD = -100 V, ID = -3.9 A, Rg = 18 Ω, RD = 24 Ω | 2 |

## CAD (KiCad official)

- Symbol: `IRFU9220PBF`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251-3 (KiCad packages3D, STEP)
- 3D model files: `irfu9220pbf-etched.step` / `irfu9220pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfu9220pbf.step` / `irfu9220pbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](docs/irfu9220pbf-datasheet.pdf) (13 pp, sha256 `150e3ee05748cf03`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfu9220pbf-datasheet.pdf)