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IRFU9120NPBF-VB

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VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFU9120NPBF-VB

VBsemi Elec · MOSFETs · TO-251

IRFU9120NPBF-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for a gate-source voltage of ±20 V with a gate threshold voltage VGS(th) of -1 V to -2.5 V.
2 D passive Drain of the P-channel MOSFET, rated for a drain-source voltage of -100 V and a continuous drain current of -12 A at TC = 25 °C.
3 S passive Source of the P-channel MOSFET, with a continuous body diode current rating of -8.8 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -12 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -8 A TJ = 150 °C, TC = 70 °C 1
Pulsed Drain Current IDM -30 A 1
Avalanche Current IAS -20 A 1
Single Avalanche Energy EAS 16.2 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 32.1 W TC = 25 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 50 °C/W PCB mount, 1 inch square FR-4 1
Junction-to-Case (Drain) RthJC 3.9 °C/W 1
Drain-Source Breakdown Voltage VDS -100 V VDS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = -100 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -15 A VDS ≤ -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.215 Ω VGS = -10 V, ID = -3.6 A 2
Drain-Source On-State Resistance RDS(on) 0.234 Ω VGS = -4.5 V, ID = -3.4 A 2
Forward Transconductance gfs 12 S VDS = -15 V, ID = -3.6 A 2
Gate Resistance Rg 1.2 5.7 11.5 Ω f = 1 MHz 2
Rise Time tr 12 18 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 33 50 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Current (body diode) IS -8.8 A TC = 25 °C 2
Pulsed Current (body diode) ISM -15 A 2
Forward Voltage VSD -0.8 -1.5 V IF = -2.9 A, VGS = 0 V 2
Peak Reverse Recovery Current IRM(REC) -4 -6 A IF = -2.9 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 98 147 nC IF = -2.9 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: IRFU9120NPBF-VB
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: irfu9120npbf-vb-etched.step / irfu9120npbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfu9120npbf-vb.step / irfu9120npbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 9d54699b3d7efb9a, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF