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IRFU120ZPBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFU120ZPBF-VB

VBsemi Elec · MOSFETs · TO-251

IRFU120ZPBF-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with gate-source voltage rated at ±20 V (VGS) per the absolute maximum ratings.
2 D passive Drain terminal, connected to the tab, with drain-source voltage rated at 100 V (VDS) and continuous drain current of 12 A at TC = 25 °C.
3 S passive Source terminal, with pulsed drain current rated at 37 A (IDM) and operating junction temperature range of -55 to +175 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current TC = 25 °C ID 12 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current TC = 100 °C ID 7.5 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 37 A 1
Linear Derating Factor 0.4 W/°C 1
Linear Derating Factor (PCB Mount) 0.025 W/°C 1
Single Pulse Avalanche Energy EAS 200 mJ 1
Avalanche Current IAR 9.2 A 1
Repetitive Avalanche Energy EAR 6 mJ 1
Maximum Power Dissipation TC = 25 °C PD 60 W TC = 25 °C 1
Maximum Power Dissipation (PCB Mount) PD 3.7 W TA = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 For 10 s 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Ambient (PCB Mount) RthJA 40 °C/W PCB Mount 2
Maximum Junction-to-Case (Drain) RthJC 2.5 °C/W 2
Drain-Source Breakdown Voltage VDS 100 V VGS = 0, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current at TJ = 150 °C IDSS 250 μA VDS = 80 V, VGS = 0 V, TJ = 150 °C 2
Forward Transconductance gfs 2.7 S VDS = 50 V, ID = 5.5 A 2
Continuous Source-Drain Diode Current IS 9.2 A 2
Pulsed Diode Forward Current ISM 37 A 2
Body Diode Voltage VSD 1.8 V TJ = 25 °C, IS = 9.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 110 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.53 1.3 μC 2

CAD (KiCad official)

  • Symbol: IRFU120ZPBF-VB
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: irfu120zpbf-vb-etched.step / irfu120zpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfu120zpbf-vb.step / irfu120zpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 44be89b0053945b6, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF