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Contents

README

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IRFS7440TRLPBF

Infineon Technologies · MOSFETs · D2PAK

IRFS7440TRLPBF from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the HEXFET; gate-to-source voltage is rated at ±20 V (absolute maximum, VGS = -20 V to +20 V).
2 D passive Drain of the HEXFET, rated V(BR)DSS 40 V minimum and 208 A continuous drain current at TC = 25°C, limited to 120 A by the bond wire.
3 S passive Source of the HEXFET and body-diode cathode-side reference, with continuous body-diode source current rated at 208 A and pulsed source current at 772 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current, TC = 25°C ID 208 A VGS @ 10V 2
Continuous Drain Current, TC = 100°C ID 147 A VGS @ 10V 2
Continuous Drain Current (Wire Bond Limited), TC = 25°C ID 120 A VGS @ 10V (Wire Bond Limited) 2
Pulsed Drain Current IDM 772 A 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 2
Mounting Torque 1.1 N m 6-32 or M3 screw 2
Single Pulse Avalanche Energy (thermally limited, L = 1mH) EAS 560 mJ 2
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 2 2.5 mΩ VGS = 10V, ID = 100A 2
Gate Threshold Voltage VGS(th) 2.2 3 3.9 V VDS = VGS, ID = 100μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS = 40V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 μA VDS = 40V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 88 S VDS = 10V, ID = 100A 3
Total Gate Charge Qg 90 135 nC ID = 100A 3
Continuous Source Current (Body Diode) IS 208 A 3
Pulsed Source Current (Body Diode) ISM 772 A 3
Diode Forward Voltage VSD 0.9 1.3 V TJ = 25°C, IS = 100A, VGS = 0V 3
Junction-to-Case RθJC 0.72 °C/W 2
Junction-to-Ambient RθJA 62 °C/W 2
Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W Flat Greased Surface 2

CAD (KiCad official)

  • Symbol: IRFS7440TRLPBF
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: irfs7440trlpbf-etched.step / irfs7440trlpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfs7440trlpbf.step / irfs7440trlpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 da99f70ef40da419, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF