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Set visibility: public

Ray ·df1b5a0340 ·1mo ago ·parent 81a5550
1 file changed +8−5
page.json+8−5
@@ -32,25 +32,25 @@         "number": "1",         "name": "G",         "type": "input",-        "description": "Gate. Insulated MOSFET gate controlling channel conduction. V_GS(th) = 2.2-3.9 V (typ. 3.0 V); absolute V_GS rating \u00b120 V. Internal gate resistance R_G \u2248 2.1 \u03a9 typ. Drive with V_GS = 10 V for rated R_DS(on) of \u22641.6 m\u03a9."+        "description": "Gate. Insulated MOSFET gate controlling channel conduction. V_GS(th) = 2.2-3.9 V (typ. 3.0 V); absolute V_GS rating ±20 V. Internal gate resistance R_G ≈ 2.1 Ω typ. Drive with V_GS = 10 V for rated R_DS(on) of ≤1.6 mΩ."       },       {         "number": "2",         "name": "D",         "type": "passive",-        "description": "Drain. High-side power terminal of the N-channel HEXFET. V_(BR)DSS \u2265 40 V; continuous I_D up to 320 A (silicon limited) / 195 A (package/bond-wire limited) at T_C = 25 \u00b0C. Electrically common with the exposed metal tab (heat-sink)."+        "description": "Drain. High-side power terminal of the N-channel HEXFET. V_(BR)DSS ≥ 40 V; continuous I_D up to 320 A (silicon limited) / 195 A (package/bond-wire limited) at T_C = 25 °C. Electrically common with the exposed metal tab (heat-sink)."       },       {         "number": "3",         "name": "S",         "type": "passive",-        "description": "Source. Low-side power terminal of the N-channel HEXFET and reference for V_GS. Also the anode of the intrinsic body diode (V_SD \u2248 0.9 V typ., 1.3 V max at I_S = 100 A) used for reverse conduction / synchronous rectification."+        "description": "Source. Low-side power terminal of the N-channel HEXFET and reference for V_GS. Also the anode of the intrinsic body diode (V_SD ≈ 0.9 V typ., 1.3 V max at I_S = 100 A) used for reverse conduction / synchronous rectification."       },       {         "number": "TAB",         "name": "D",         "type": "passive",-        "description": "Exposed metal heat-sink tab, electrically tied to Drain. Provides the primary thermal path (R_thJC \u2248 0.5 \u00b0C/W max) - solder to a copper pour for heat removal and drain current handling."+        "description": "Exposed metal heat-sink tab, electrically tied to Drain. Provides the primary thermal path (R_thJC ≈ 0.5 °C/W max) - solder to a copper pour for heat removal and drain current handling."       }     ],     "provenance": {@@ -132,5 +132,8 @@     "docs/irfs7434trlpbf-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file