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IRFS4410Z

UMW · MOSFETs · TO-263

IRFS4410Z from UMW, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal; the gate-to-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings.
2 D passive DRAIN terminal; the datasheet rates the continuous drain current at 97 A (VGS=10V, silicon limited, TC=25°C) with VDS of 100 V.
3 S passive SOURCE terminal; the datasheet rates the continuous source (body diode) current at 97 A and the pulsed source current at 390 A.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=150μA 3
Static Drain-to-Source On-Resistance RDS(ON) 7.2 9 mΩ VGS=10V, ID=58A 3
Drain-to-Source Leakage Current IDSS 20 µA VDS=100V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 250 µA VDS=80V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Forward Transconductance gFS 140 S VDS=10V, ID=58A 3
Total Gate Charge Qg 83 120 nC ID=58A, VDS=50V, VGS=10V 3
Continuous Source Current (Body Diode) IS 97 A 4
Pulsed Source Current (Body Diode) ISM 390 A 4
Diode Forward Voltage VSD 1.3 V TJ=25°C, IS=58A, VGS=0V 4
Continuous Drain Current, VGS=10V (Silicon Limited) at TC=25°C ID 97 A TC=25°C 1
Continuous Drain Current, VGS=10V (Silicon Limited) at TC=100°C ID 69 A TC=100°C 1
Pulsed Drain Current IDM 390 A 1
Maximum Power Dissipation PD 230 W TC=25°C 1
Linear Derating Factor 1.5 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt 16 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature, for 10 seconds (1.6mm from case) 300 °C 10 seconds, 1.6mm from case 1
Mounting torque, 6-32 or M3 screw 10 lb. in 6-32 or M3 screw (1.1 N. m) 1
Single Pulse Avalanche Energy EAS(Thermally limited) 242 mJ Thermally limited 1
Junction-to-Case RθJC 0.65 °C/W Junction-to-Case 2
Junction-to-Ambient (PCB Mount), D2Pak RθJA 40 °C/W Junction-to-Ambient (PCB Mount), D2Pak 2
Junction-to-Ambient, TO-220 RθJA 62 °C/W Junction-to-Ambient, TO-220 2
Case-to-Sink, Flat Greased Surface, TO-220 RθCS 0.5 °C/W Case-to-Sink, Flat Greased Surface, TO-220 2

CAD (KiCad official)

  • Symbol: IRFS4410Z
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: irfs4410z-etched.step / irfs4410z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfs4410z.step / irfs4410z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (13 pp, sha256 31b37da3429dae98, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF