component

IRFS4321TRLPBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFS4321TRLPBF

Infineon Technologies · MOSFETs · D2PAK

IRFS4321TRLPBF from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage is rated ±30 V (VGS max), with VGS(th) of 3.0 V min to 5.0 V max.
2 D passive Drain terminal; continuous drain current is 85 A at TC = 25°C (60 A at TC = 100°C) with VDSS of 150 V.
3 S passive Source terminal; body diode continuous source current is rated 85 A and pulsed source current 330 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current (TC = 25°C) ID 85 A VGS @ 10V, TC = 25°C 1
Continuous Drain Current (TC = 100°C) ID 60 A VGS @ 10V, TC = 100°C 1
Pulsed Drain Current IDM 330 A 1
Maximum Power Dissipation PD 350 W TC = 25°C 1
Linear Derating Factor 2.3 W/°C 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy (thermally limited) EAS 120 mJ Thermally limited, single pulse 1
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Junction-to-Case Thermal Resistance RθJC 0.43 °C/W 1
Junction-to-Case Thermal Resistance (end of life) RθJC 0.65 °C/W End of life after 1000 temperature cycles from -55 to 150°C (footnote) 1
Junction-to-Ambient Thermal Resistance RθJA 40 °C/W 1
Drain-to-Source Breakdown Voltage V(BR)DSS 150 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 12 15 mΩ VGS = 10V, ID = 33A 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250μA 2
Drain-to-Source Leakage Current IDSS 20 μA VDS = 150V, VGS = 0V 2
Drain-to-Source Leakage Current (TJ = 125°C) IDSS 1 mA VDS = 150V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 130 S VDS = 25V, ID = 50A 2
Total Gate Charge Qg 71 110 nC 2
Continuous Source Current (Body Diode) IS 85 A 2
Pulsed Source Current (Body Diode) ISM 330 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 50A, VGS = 0V 2
Reverse Recovery Time trr 89 130 ns ID = 50A 2
Reverse Recovery Charge Qrr 300 450 nC VR = 128V, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: IRFS4321TRLPBF
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: irfs4321trlpbf-etched.step / irfs4321trlpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfs4321trlpbf.step / irfs4321trlpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 3027da497c4cd417, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF