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IRFS4310ZTRLPBF

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Infineon Technologies MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFS4310ZTRLPBF

Infineon Technologies · MOSFETs · D2PAK

IRFS4310ZTRLPBF from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits VGS to ±20 V (absolute maximum ratings), and VGS(th) is 2.0 V min to 4.0 V max.
2 D passive Drain terminal, electrically connected to the mounting tab; rated VDSS 100 V with continuous ID of 127 A at TC = 25°C (silicon limited).
3 S passive Source terminal, the reference for VGS and the body diode; body diode continuous source current IS is 127 A and pulsed ISM is 560 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 4.8 6 mΩ VGS = 10V, ID = 75A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 150μA 2
Drain-to-Source Leakage Current IDSS 20 μA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 μA VDS = 80V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 150 S VDS = 50V, ID = 75A 2
Total Gate Charge Qg 120 170 nC 2
Continuous Source Current (Body Diode) IS 127 A 2
Pulsed Source Current (Body Diode) ISM 560 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID 127 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID 90 A TC = 100°C 1
Continuous Drain Current, VGS @ 10V (Wire Bond Limited) ID 120 A TC = 25°C 1
Pulsed Drain Current IDM 560 A 1
Maximum Power Dissipation PD 250 W TC = 25°C 1
Linear Derating Factor 1.7 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt 18 V/ns ISD 75A, di/dt 600A/μs, TJ 175°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature, for 10 seconds 300 °C 1.6mm from case 1
Mounting Torque, 6-32 or M3 screw 1.1 N·m 6-32 or M3 screw 1
Single Pulse Avalanche Energy (thermally limited) EAS 475 mJ Thermally limited, single pulse 1
Junction-to-Case RJC 0.6 °C/W 1
Junction-to-Ambient (PCB Mount), D2Pak RJA 40 °C/W Mounted on 1" square PCB (FR-4 or G-10) 1

CAD (KiCad official)

  • Symbol: IRFS4310ZTRLPBF
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: irfs4310ztrlpbf-etched.step / irfs4310ztrlpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfs4310ztrlpbf.step / irfs4310ztrlpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 7d0e035504a35060, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF