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IRFS4310ZTRLPBF-HXY

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HXY MOSFET MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFS4310ZTRLPBF-HXY

HXY MOSFET · MOSFETs · TO-263

IRFS4310ZTRLPBF-HXY from HXY MOSFET, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±20 V (VGS) in the absolute maximum ratings.
2 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 100 V (VDS) and the continuous drain current 260 A at TC=25°C.
3 S passive Source terminal of the N-channel MOSFET; the continuous source current is rated 260 A at TC=25°C in the body diode characteristics.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 260 A TC=25°C 1
Continuous Drain Current ID 163 A TC=100°C 1
Pulsed Drain Current IDM 1028 A 1
Single Pulse Avalanche Energy EAS 583 mJ 1
Total Power Dissipation PD 379 W TC=25°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance from Junction-to-Ambient RθJA 59 °C/W 1
Thermal Resistance from Junction-to-Case RθJC 0.33 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Gate-body Leakage current lGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA TJ=25°C, VDS =100V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 100 μA TJ=100°C, VDS =100V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250µA 2
Diode Forward Voltage VSD 1.2 V ID = 20A, VGS = 0V 2
Continuous Source Current IS 260 A TC=25°C 2
Drain-Source on-Resistance RDS(on) 4.2 mΩ VGS = 10V, ID = 20A 2
Forward Transconductance gfs 76 S VDS=10V, ID=20A 2
Input Capacitance Ciss 9030 pF VDS = 50V, VGS =0V, f =1MHz 2
Output Capacitance Coss 1505 pF VDS = 50V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance Crss 40 pF VDS = 50V, VGS =0V, f =1MHz 2
Gate Resistance Rg 2.3 Ω f =1MHz 2
Total Gate Charge Qg 150 nC VGS = 10V, VDS = 50V, ID=20A 2
Gate-Source Charge Qgs 32.5 nC VGS = 10V, VDS = 50V, ID=20A 2
Gate-Drain Charge Qgd 49 nC VGS = 10V, VDS = 50V, ID=20A 2
Turn-on Delay Time td(on) 27 ns VGS =10V, VDD =50V, RG = 3Ω, ID= 20A 2
Rise Time tr 78.5 ns VGS =10V, VDD =50V, RG = 3Ω, ID= 20A 2
Turn-off Delay Time td(off) 110 ns VGS =10V, VDD =50V, RG = 3Ω, ID= 20A 2
Fall Time tf 86 ns VGS =10V, VDD =50V, RG = 3Ω, ID= 20A 2
Body Diode Reverse Recovery Time trr 88 ns IF = 20A, dI/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 220 nC 2

CAD (KiCad official)

  • Symbol: IRFS4310ZTRLPBF-HXY
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: irfs4310ztrlpbf-hxy-etched.step / irfs4310ztrlpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfs4310ztrlpbf-hxy.step / irfs4310ztrlpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 e12bb2f89a566c7a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF