main
Ray Publish 0.1.0 e212138 4d ago

IRFR9214TRPBF-VB

VBsemi Elec · MOSFETs · TO-252

IRFR9214TRPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated at ±20 V, with gate-source threshold VGS(th) between -1.5 V and -4.0 V.
2 D passive Drain terminal, connected to the tab; rated for -200 V drain-source voltage and -3.6 A continuous drain current at TC = 25 °C.
3 S passive Source terminal; continuous source-drain diode current is rated at -3.5 A with a body diode reverse recovery time of 200 to 300 ns.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -3.6 A VGS at -10 V, TC = 25 °C 1
Continuous Drain Current ID -2.5 A VGS at -10 V, TC = 100 °C 1
Pulsed Drain Current IDM -12 A 1
Single Pulse Avalanche Energy EAS 500 mJ VDD = -50 V, starting TJ = 25 °C, L = 17 mH 1
Avalanche Current IAR -6.4 A 1
Repetitive Avalanche Energy EAR 7.4 mJ 1
Maximum Power Dissipation PD 74 W TC = 25 °C 1
Maximum Power Dissipation (PCB mount) PD 3 W TA = 25 °C 1
Peak Diode Recovery dV/dt dV/dt -5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak temperature) 300 °C for 10 s, 1.6 mm from case 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Ambient (PCB mount) RthJA 40 °C/W PCB mount 2
Maximum Junction-to-Case (Drain) RthJC 1.7 °C/W 2
Drain-Source Breakdown Voltage VDS -200 V VGS = 0, ID = -250 μA 2
Gate-Source Threshold Voltage VGS(th) -1.5 -4 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage IGSS -10 10 μA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -100 μA VDS = -200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -500 μA VDS = -160 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 2.8 S VDS = -50 V, ID = -1.0 A 2
Gate Input Resistance Rg 0.6 3.7 Ω f = 1 MHz, open drain 2
Continuous Source-Drain Diode Current IS -3.5 A 2
Pulsed Diode Forward Current ISM -6 A 2
Body Diode Voltage VSD -6.5 V TJ = 25 °C, IS = -3.5A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 300 ns TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 2.9 μC TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs 2
Total Gate Charge Qg 29 nC ID = -3.5A, VDS = -160 V, VGS = -10 V 2
Gate-Source Charge Qgs 5.4 nC ID = -3.5A, VDS = -160 V, VGS = -10 V 2
Gate-Drain Charge Qgd 15 nC ID = -3.5A, VDS = -160 V, VGS = -10 V 2

CAD (KiCad official)

  • Symbol: IRFR9214TRPBF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr9214trpbf-vb-etched.step / irfr9214trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr9214trpbf-vb.step / irfr9214trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 060b1f6238100ce4, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF