component
IRFR9214TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFR9214TRPBF-VB
VBsemi Elec · MOSFETs · TO-252
IRFR9214TRPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V, with gate-source threshold VGS(th) between -1.5 V and -4.0 V. |
| 2 | D | passive | Drain terminal, connected to the tab; rated for -200 V drain-source voltage and -3.6 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal; continuous source-drain diode current is rated at -3.5 A with a body diode reverse recovery time of 200 to 300 ns. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -3.6 | A | VGS at -10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | VGS at -10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -12 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 500 | mJ | VDD = -50 V, starting TJ = 25 °C, L = 17 mH | 1 | ||
| Avalanche Current | IAR | -6.4 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 7.4 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 74 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB mount) | PD | 3 | W | TA = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB mount) | RthJA | 40 | °C/W | PCB mount | 2 | ||
| Maximum Junction-to-Case (Drain) | RthJC | 1.7 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | -200 | V | VGS = 0, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -4 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-Source Leakage | IGSS | -10 | 10 | μA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -100 | μA | VDS = -200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 2.8 | S | VDS = -50 V, ID = -1.0 A | 2 | ||
| Gate Input Resistance | Rg | 0.6 | 3.7 | Ω | f = 1 MHz, open drain | 2 | |
| Continuous Source-Drain Diode Current | IS | -3.5 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | -6 | A | 2 | |||
| Body Diode Voltage | VSD | -6.5 | V | TJ = 25 °C, IS = -3.5A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 300 | ns | TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 2.9 | μC | TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs | 2 | ||
| Total Gate Charge | Qg | 29 | nC | ID = -3.5A, VDS = -160 V, VGS = -10 V | 2 | ||
| Gate-Source Charge | Qgs | 5.4 | nC | ID = -3.5A, VDS = -160 V, VGS = -10 V | 2 | ||
| Gate-Drain Charge | Qgd | 15 | nC | ID = -3.5A, VDS = -160 V, VGS = -10 V | 2 |
CAD (KiCad official)
- Symbol:
IRFR9214TRPBF-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr9214trpbf-vb-etched.step/irfr9214trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr9214trpbf-vb.step/irfr9214trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
060b1f6238100ce4, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFR9214TRPBF-VB
**VBsemi Elec** · MOSFETs · TO-252
IRFR9214TRPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V, with gate-source threshold VGS(th) between -1.5 V and -4.0 V. |
| 2 | D | passive | Drain terminal, connected to the tab; rated for -200 V drain-source voltage and -3.6 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal; continuous source-drain diode current is rated at -3.5 A with a body diode reverse recovery time of 200 to 300 ns. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -200 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | -3.6 | A | VGS at -10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | -2.5 | A | VGS at -10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | -12 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 500 | mJ | VDD = -50 V, starting TJ = 25 °C, L = 17 mH | 1 |
| Avalanche Current | IAR | | | -6.4 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 7.4 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 74 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (PCB mount) | PD | | | 3 | W | TA = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | | | -5 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Recommendations (Peak temperature) | | | | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 62 | °C/W | | 2 |
| Maximum Junction-to-Ambient (PCB mount) | RthJA | | | 40 | °C/W | PCB mount | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 1.7 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | -200 | | | V | VGS = 0, ID = -250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | | -4 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage | IGSS | -10 | | 10 | μA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -100 | μA | VDS = -200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 |
| Forward Transconductance | gfs | 2.8 | | | S | VDS = -50 V, ID = -1.0 A | 2 |
| Gate Input Resistance | Rg | 0.6 | | 3.7 | Ω | f = 1 MHz, open drain | 2 |
| Continuous Source-Drain Diode Current | IS | | | -3.5 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | -6 | A | | 2 |
| Body Diode Voltage | VSD | | | -6.5 | V | TJ = 25 °C, IS = -3.5A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | | 300 | ns | TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | | 2.9 | μC | TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs | 2 |
| Total Gate Charge | Qg | | | 29 | nC | ID = -3.5A, VDS = -160 V, VGS = -10 V | 2 |
| Gate-Source Charge | Qgs | | | 5.4 | nC | ID = -3.5A, VDS = -160 V, VGS = -10 V | 2 |
| Gate-Drain Charge | Qgd | | | 15 | nC | ID = -3.5A, VDS = -160 V, VGS = -10 V | 2 |
## CAD (KiCad official)
- Symbol: `IRFR9214TRPBF-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr9214trpbf-vb-etched.step` / `irfr9214trpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr9214trpbf-vb.step` / `irfr9214trpbf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/irfr9214trpbf-vb-datasheet.pdf) (9 pp, sha256 `060b1f6238100ce4`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfr9214trpbf-vb-datasheet.pdf)