# IRFR9120NTR

**UMW** · MOSFETs · TO-252

IRFR9120NTR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE; the datasheet rates the gate-source voltage at ±20 V (VGS). |
| 2 | D | passive | DRAIN; the datasheet rates the drain-source voltage at -100 V and continuous drain current at -8 A (TC=25°C). |
| 3 | S | passive | SOURCE; the datasheet gives no source-specific limit beyond the absolute maximum ratings in Section 4. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -100 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-100V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  |  | 210 | mΩ | VGS=-10V, ID=-6A | 2 |
| Gate Threshold Voltage | VGS(th) |  |  | -3 | V | VDS=VGS, ID=-250µA | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-4A | 2 |
| Drain-Source Voltage | VDS | -100 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID | -8 |  |  | A |  | 1 |
| Drain Current-Continuous (TC=100°C) | ID(100°C) | -6 |  |  | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | -30 |  |  | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 40 | W |  | 1 |
| Derating factor |  |  |  | 0.32 | W/°C |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 110 | mJ | Note 5: TJ=25°C, VDD=-50V, VG=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-to-Case | RthJC |  | 3.13 |  | °C/W | Note 2 | 1 |

## CAD (KiCad official)

- Symbol: `IRFR9120NTR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr9120ntr-etched.step` / `irfr9120ntr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr9120ntr.step` / `irfr9120ntr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](docs/irfr9120ntr-datasheet.pdf) (8 pp, sha256 `20c0c9e68ed6291f`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfr9120ntr-datasheet.pdf)