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IRFR8314TR

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFR8314TR

UMW · MOSFETs · TO-252

IRFR8314TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage VGS is rated ±20 V.
2 D passive Drain terminal; drain-to-source voltage VDS is rated 30 V, with continuous ID of 90 A at TC=25°C (package limited).
3 S passive Source terminal; reference for VGS, and carries the body-diode source current (IS 179 A continuous, ISM 357 A pulsed).

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1.2 1.6 2.6 V VDS=VGS, ID=100μA 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=24V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Static Drain-to-Source On-Resistance RDS(ON) 2.2 mΩ VGS=10V, ID=90A 3
Static Drain-to-Source On-Resistance RDS(ON) 3.1 mΩ VGS=4.5V, ID=72A 3
Continuous Source Current (Body Diode) IS 179 A 4
Pulsed Source Current (Body Diode) ISM 357 A 4
Diode Forward Voltage VSD 1 V TJ=25°C, IF=72A, VGS=0V 4
Drain-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current, Silicon Limited ID 179 A VGS=10V, TC=25°C 1
Continuous Drain Current, Silicon Limited ID 127 A VGS=10V, TC=100°C 1
Continuous Drain Current, Package Limited ID 90 A VGS=10V, TC=25°C 1
Pulsed Drain Current IDM 357 A TC=25°C 1
Maximum Power Dissipation PD 125 W TC=25°C 1
Maximum Power Dissipation PD 63 W TC=100°C 1
Linear Derating Factor 0.83 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature, for 10 seconds 300 °C 1.6mm from case, 10 s 1
Thermal Resistance, Junction-to-Case RθJC 1.2 °C/W 2
Thermal Resistance, Junction-to-Ambient (PCB Mount) RθJA 50 °C/W PCB mount 2
Thermal Resistance, Junction-to-Ambient RθJA 110 °C/W 2

CAD (KiCad official)

  • Symbol: IRFR8314TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr8314tr-etched.step / irfr8314tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr8314tr.step / irfr8314tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 f9c039961d90198d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF