component
IRFR5505TR
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFR5505TR
UMW · MOSFETs · TO-252
IRFR5505TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE of the P-channel MOSFET; the gate-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | D | passive | DRAIN; the part is rated for a drain-source voltage of -60 V and a continuous drain current of -10 A at VGS = -10 V, TC = 25°C. |
| 3 | S | passive | SOURCE; the reference terminal for the gate-source voltage, with the source current limited by the total power dissipation per note 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=250μA | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | µA | VDS=-48V, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | µA | VDS=-48V, VGS=0V, TJ=55°C | 2 | ||
| Continuous Source Current | IS | -18 | A | 2 | |||
| Pulsed Source Current | ISM | -36 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 110 | mΩ | VGS=-10V (Features) | 1 | ||
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -10 | A | VGS @ -10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID | -8 | A | VGS @ -10V, TC=100°C | 1 | ||
| Continuous Drain Current | ID | -9 | A | VGS @ -10V, TA=25°C | 1 | ||
| Continuous Drain Current | ID | -6.5 | A | VGS @ -10V, TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -36 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 25 | mJ | 1 | |||
| Avalanche Current | IAS | -26.6 | A | 1 | |||
| Total Power Dissipation | PD | 34 | W | TC=25°C | 1 | ||
| Total Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 42 | °C/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3.6 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
IRFR5505TR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr5505tr-etched.step/irfr5505tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr5505tr.step/irfr5505tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (8 pp, sha256
b577818bfac14971, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFR5505TR
**UMW** · MOSFETs · TO-252
IRFR5505TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE of the P-channel MOSFET; the gate-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | D | passive | DRAIN; the part is rated for a drain-source voltage of -60 V and a continuous drain current of -10 A at VGS = -10 V, TC = 25°C. |
| 3 | S | passive | SOURCE; the reference terminal for the gate-source voltage, with the source current limited by the total power dissipation per note 5. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=250μA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | µA | VDS=-48V, VGS=0V, TJ=25°C | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | µA | VDS=-48V, VGS=0V, TJ=55°C | 2 |
| Continuous Source Current | IS | | | -18 | A | | 2 |
| Pulsed Source Current | ISM | | | -36 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 110 | mΩ | VGS=-10V (Features) | 1 |
| Drain-Source Voltage | VDS | | | -60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | -10 | A | VGS @ -10V, TC=25°C | 1 |
| Continuous Drain Current | ID | | | -8 | A | VGS @ -10V, TC=100°C | 1 |
| Continuous Drain Current | ID | | | -9 | A | VGS @ -10V, TA=25°C | 1 |
| Continuous Drain Current | ID | | | -6.5 | A | VGS @ -10V, TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | -36 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 25 | mJ | | 1 |
| Avalanche Current | IAS | | | -26.6 | A | | 1 |
| Total Power Dissipation | PD | | | 34 | W | TC=25°C | 1 |
| Total Power Dissipation | PD | | | 2 | W | TA=25°C | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 42 | °C/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 3.6 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `IRFR5505TR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr5505tr-etched.step` / `irfr5505tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr5505tr.step` / `irfr5505tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755879574410403840) (8 pp, sha256 `b577818bfac14971`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfr5505tr-datasheet.pdf)