component
IRFR540ZPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFR540ZPBF-VB
VBsemi Elec · MOSFETs · TO-252
IRFR540ZPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage VGS of ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET and the case/tab (Junction-to-Case (Drain), RthJC 1.4 °C/W), rated for a drain-source voltage VDS of 100 V and a continuous drain current ID of 40 A at TC = 25 °C. |
| 3 | S | passive | Source of the MOSFET, with a source-drain diode continuous current IS rated at 40 A and pulsed current ISM at 120 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 40 | A | TC = 25 °C (TJ = 175 °C) | 1 | ||
| Continuous Drain Current | ID | 23 | A | TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | 120 | A | 1 | |||
| Avalanche Current | IAR | 35 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 61 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 107 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.75 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 40 | °C/W | PCB mount, 1" square FR-4 PCB (note c) | 1 | ||
| Junction-to-Case (Drain) | RthJC | 1.4 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VSS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 100 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 100 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 75 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.03 | Ω | VGS = 10 V, ID = 5 A | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.067 | Ω | VGS = 10 V, ID = 3 A, TJ = 175 °C | 2 | ||
| Forward Transconductance | gfs | 10 | S | VDS = 15 V, ID = 15 A | 2 | ||
| Total Gate Charge | Qg | 35 | 60 | nC | VDS = 50 V, VGS = 10 V, ID = 40 A | 2 | |
| Turn-On Delay Time | td(on) | 11 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Rise Time | tr | 12 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Fall Time | tf | 12 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Continuous Current (source-drain diode) | IS | 40 | A | TC = 25 °C | 2 | ||
| Pulsed Current (source-drain diode) | ISM | 120 | A | TC = 25 °C | 2 | ||
| Forward Voltage | VSD | 1 | 1.5 | V | IF = 30 A, VGS = 0 V | 2 | |
| Reverse Recovery Charge | Qrr | 0.15 | 0.4 | µC | IF = 30 A, di/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
IRFR540ZPBF-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr540zpbf-vb-etched.step/irfr540zpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr540zpbf-vb.step/irfr540zpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
204083d9894954bc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFR540ZPBF-VB
**VBsemi Elec** · MOSFETs · TO-252
IRFR540ZPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage VGS of ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET and the case/tab (Junction-to-Case (Drain), RthJC 1.4 °C/W), rated for a drain-source voltage VDS of 100 V and a continuous drain current ID of 40 A at TC = 25 °C. |
| 3 | S | passive | Source of the MOSFET, with a source-drain diode continuous current IS rated at 40 A and pulsed current ISM at 120 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 40 | A | TC = 25 °C (TJ = 175 °C) | 1 |
| Continuous Drain Current | ID | | | 23 | A | TC = 125 °C | 1 |
| Pulsed Drain Current | IDM | | | 120 | A | | 1 |
| Avalanche Current | IAR | | | 35 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 61 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 107 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 3.75 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient (PCB Mount) | RthJA | | | 40 | °C/W | PCB mount, 1" square FR-4 PCB (note c) | 1 |
| Junction-to-Case (Drain) | RthJC | | | 1.4 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VSS = 0 V, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | µA | VDS = 100 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 100 V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 75 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.03 | Ω | VGS = 10 V, ID = 5 A | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.067 | Ω | VGS = 10 V, ID = 3 A, TJ = 175 °C | 2 |
| Forward Transconductance | gfs | 10 | | | S | VDS = 15 V, ID = 15 A | 2 |
| Total Gate Charge | Qg | | 35 | 60 | nC | VDS = 50 V, VGS = 10 V, ID = 40 A | 2 |
| Turn-On Delay Time | td(on) | | 11 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 |
| Rise Time | tr | | 12 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 30 | 45 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 |
| Fall Time | tf | | 12 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 |
| Continuous Current (source-drain diode) | IS | | | 40 | A | TC = 25 °C | 2 |
| Pulsed Current (source-drain diode) | ISM | | | 120 | A | TC = 25 °C | 2 |
| Forward Voltage | VSD | | 1 | 1.5 | V | IF = 30 A, VGS = 0 V | 2 |
| Reverse Recovery Charge | Qrr | | 0.15 | 0.4 | µC | IF = 30 A, di/dt = 100 A/µs | 2 |
## CAD (KiCad official)
- Symbol: `IRFR540ZPBF-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr540zpbf-vb-etched.step` / `irfr540zpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr540zpbf-vb.step` / `irfr540zpbf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609123335347724288) (8 pp, sha256 `204083d9894954bc`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfr540zpbf-vb-datasheet.pdf)