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IRFR5305TRPBF

Public Made by Adom

by adom

XBLW MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFR5305TRPBF

XBLW · MOSFETs · TO-252-2L

IRFR5305TRPBF from XBLW, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the P-channel MOSFET, with RDS(ON) < 72mΩ at VGS=-10V and < 100mΩ at VGS=-4.5V, and an absolute maximum VGS of ±20V.
2 D passive Drain (short middle lead, connected to the exposed tab); VDS = -60V maximum and continuous ID = -20A at 25℃ (-15A at 70℃, pulsed -48A).
3 S passive Source; the body diode conducts from this pin to the drain, with VSD of -1V maximum at IS=-1A.

Key specifications

Parameter Value
Manufacturer XBLW
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current-Continuous ID(25℃) -20 A 25℃ 2
Drain Current-Continuous ID(70℃) -15 A 70℃ 2
Drain Current-Pulsed IDM -48 A Note 1 (pulse width limited by max junction temperature) 2
Maximum Power Dissipation PD 40 W 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 2
Thermal Resistance, Junction-to-Ambient RθJA 20 ℃/W Surface mounted on 1in2 FR4 board, t ≤ 10 sec (Note 2) 2
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250μA 3
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-48V, VGS=0V 3
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VDS=VGS, ID=-250μA 3
Drain-Source On-State Resistance RDS(ON) 64 72 mΩ VGS=-10V, ID=-10A 3
Drain-Source On-State Resistance RDS(ON) 90 100 mΩ VGS=-4.5V, ID=-10A 3
Forward Transconductance gFS 5 S VDS=-5V, ID=-20A 3
Input Capacitance Clss 2460 pF VDS=-30V, VGS=0V, F=1.0MHz 3
Output Capacitance Coss 220 pF VDS=-30V, VGS=0V, F=1.0MHz 3
Reverse Transfer Capacitance Crss 155 pF VDS=-30V, VGS=0V, F=1.0MHz 3
Turn-on Delay Time td(on) 14 nS VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A 3
Turn-on Rise Time tr 20 nS VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A 3
Turn-Off Delay Time td(off) 40 nS VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A 3
Turn-Off Fall Time tf 19 nS VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A 3
Total Gate Charge Qg 48 nC VDS=-30V, ID=-20A, VGS=-10V 3
Gate-Source Charge Qgs 11 nC VDS=-30V, ID=-20A, VGS=-10V 3
Gate-Drain Charge Qgd 10 nC VDS=-30V, ID=-20A, VGS=-10V 3
Body Diode Reverse Recovery Time Trr 40 nS IF=-20A, dI/dt=100A/µs 3
Body Diode Reverse Recovery Charge Qrr 56 nC IF=-20A, dI/dt=100A/µs 3
Diode Forward Voltage VSD -0.72 -1 V VGS=0V, IS=-1A (Note 3: pulse width ≤ 300μs, duty cycle ≤ 2%) 3

CAD (KiCad official)

  • Symbol: IRFR5305TRPBF
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: irfr5305trpbf-etched.step / irfr5305trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr5305trpbf.step / irfr5305trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XBLW datasheet (8 pp, sha256 485b0732cdb906a4, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF