component
IRFR5305TRPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFR5305TRPBF-HXY
HXY MOSFET · MOSFETs · TO-252-2L
IRFR5305TRPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with RDS(ON) specified at VGS=-10V and -4.5V and threshold of -1 to -2.5 V. |
| 2 | D | passive | Drain, connected to the exposed metal tab; VDS rated -60 V and continuous drain current -20 A at 25°C (pulsed -48 A). |
| 3 | S | passive | Source of the P-channel MOSFET; body diode forward voltage is -1 V max at IS=-1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID(25℃) | -20 | A | TA=25℃ (symbol ID(25℃)) | 1 | ||
| Drain Current-Continuous | ID(70℃) | -15 | A | TA=70℃ (symbol ID(70℃)) | 1 | ||
| Drain Current-Pulsed | IDM | -48 | A | Repetitive rating: pulse width limited by maximum junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 40 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 20 | ℃/W | Surface mounted on 1in2 FR4 board, t ≤ 10 sec (Note 2) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-48V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 64 | 72 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 90 | 100 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Diode Forward Voltage | VSD | -0.72 | -1 | V | VGS=0V, IS=-1A; Note 3: pulse width ≤ 300μs, duty cycle ≤ 2% | 2 | |
| Forward Transconductance | gFS | 5 | S | VDS=-5V, ID=-20A | 2 | ||
| Input Capacitance | Clss | 2460 | pF | VDS=-30V, VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 220 | pF | VDS=-30V, VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 155 | pF | VDS=-30V, VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 14 | nS | VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A | 2 | ||
| Turn-on Rise Time | tr | 20 | nS | VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A | 2 | ||
| Turn-Off Delay Time | td(off) | 40 | nS | VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A | 2 | ||
| Turn-Off Fall Time | tf | 19 | nS | VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A | 2 | ||
| Total Gate Charge | Qg | 48 | nC | VDS=-30V, ID=-20A, VGS=-10V | 2 | ||
| Gate-Source Charge | Qgs | 11 | nC | VDS=-30V, ID=-20A, VGS=-10V | 2 | ||
| Gate-Drain Charge | Qgd | 10 | nC | VDS=-30V, ID=-20A, VGS=-10V | 2 | ||
| Body Diode Reverse Recovery Time | Trr | 40 | nS | IF=-20A, dI/dt=100A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 56 | nC | IF=-20A, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
IRFR5305TRPBF-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
irfr5305trpbf-hxy-etched.step/irfr5305trpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr5305trpbf-hxy.step/irfr5305trpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
25971fe19470a91e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).