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IRFR5305T

HXY MOSFET · MOSFETs · TO-252-2L

IRFR5305T from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for a gate-source voltage of ±20 V maximum with a threshold of -1 V min to -2.5 V max at ID=-250 µA.
2 D passive Drain, connected to the exposed tab, with a drain-source voltage of -60 V maximum and a continuous drain current of -20 A at 25 °C (-48 A pulsed).
3 S passive Source of the P-channel MOSFET, with a drain-source on-resistance of 72 mΩ max at VGS=-10 V and 100 mΩ max at VGS=-4.5 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID(25℃) -20 A 1
Drain Current-Continuous ID(70℃) -15 A 1
Drain Current-Pulsed IDM -48 A Repetitive rating, pulse width limited by max junction temperature (Note 1) 1
Maximum Power Dissipation PD 40 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 20 ℃/W Surface mounted on 1in2 FR4 board, t ≤ 10 sec (Note 2) 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-48V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 64 72 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-State Resistance RDS(ON) 90 100 mΩ VGS=-4.5V, ID=-10A 2
Forward Transconductance gFS 5 S VDS=-5V, ID=-20A 2
Input Capacitance Clss 2460 PF VDS=-30V, VGS=0V, F=1.0MHz 2
Output Capacitance Coss 220 PF VDS=-30V, VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 155 PF VDS=-30V, VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 14 nS VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A 2
Turn-on Rise Time tr 20 nS VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A 2
Turn-Off Delay Time td(off) 40 nS VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A 2
Turn-Off Fall Time tf 19 nS VDS=-30V, VGS=-10V, RGEN=3Ω, ID=1A 2
Total Gate Charge Qg 48 nC VDS=-30V, ID=-20A, VGS=-10V 2
Gate-Source Charge Qgs 11 nC VDS=-30V, ID=-20A, VGS=-10V 2
Gate-Drain Charge Qgd 10 nC VDS=-30V, ID=-20A, VGS=-10V 2
Body Diode Reverse Recovery Time Trr 40 nS IF=-20A, dI/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 56 nC IF=-20A, dI/dt=100A/µs 2
Diode Forward Voltage VSD -0.72 -1 V VGS=0V, IS=-1A 2

CAD (KiCad official)

  • Symbol: IRFR5305T
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: irfr5305t-etched.step / irfr5305t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr5305t.step / irfr5305t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 1a2c076280080f77, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF