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IRFR430ATRPBF

Infineon Technologies · MOSFETs · TO-252

IRFR430ATRPBF from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±30 V, with VGS(th) of 2.0 to 4.5 V at ID = 250 µA.
2 D passive Drain terminal (the exposed tab, with no center lead on the DPAK outline); VDS rated at 500 V and continuous ID of 5.0 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET; continuous body-diode current IS of 5.0 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IRFR430ATRPBF
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr430atrpbf-etched.step / irfr430atrpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr430atrpbf.step / irfr430atrpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 b1da6f0077da3934, retrieved 2026-10-22, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF