component
IRFR4105TR
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFR4105TR
UMW · MOSFETs · TO-252
IRFR4105TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE of the MOSFET; gate-to-source voltage is rated VGS = ±20 V in the absolute maximum ratings. |
| 2 | D | passive | DRAIN of the MOSFET; the datasheet rates VDS at 55 V and continuous drain current ID at 27 A (VGS = 10 V, TC = 25°C). |
| 3 | S | passive | SOURCE of the MOSFET; it is the reference terminal for the VGS rating and the body-diode ratings (IS, ISM, VSD). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 55 | V | ID=250µA, VGS=0V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.052 | V/°C | ID=1mA, Reference to 25°C | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 45 | mΩ | VGS=10V, ID=16A | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250µA | 3 | |
| Drain-to-Source Leakage Current | IDSS | 25 | µA | VDS=55V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current (TJ=150°C) | IDSS | 250 | µA | VDS=44V, VGS=0V, TJ=150°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Input Capacitance | Ciss | 700 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Output Capacitance | Coss | 240 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 100 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Continuous Drain Current, VGS=10V | ID | 27 | A | TC=25°C | 1 | ||
| Continuous Drain Current, VGS=10V | ID | 19 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Power Dissipation | PD | 68 | W | 1 | |||
| Linear Derating Factor | 0.45 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 65 | mJ | 1 | |||
| Avalanche Current | IAR | 16 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 6.8 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature, for 10 seconds | 300 | °C | 1.6mm from case | 1 | |||
| Junction-to-Case | RθJC | 2.2 | °C/W | 2 | |||
| Junction-to-Ambient (PCB Mount) | RθJA | 50 | °C/W | 2 | |||
| Junction-to-Ambient | RθJA | 110 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRFR4105TR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr4105tr-etched.step/irfr4105tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr4105tr.step/irfr4105tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
f0ed2b50d6d825c3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFR4105TR
**UMW** · MOSFETs · TO-252
IRFR4105TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE of the MOSFET; gate-to-source voltage is rated VGS = ±20 V in the absolute maximum ratings. |
| 2 | D | passive | DRAIN of the MOSFET; the datasheet rates VDS at 55 V and continuous drain current ID at 27 A (VGS = 10 V, TC = 25°C). |
| 3 | S | passive | SOURCE of the MOSFET; it is the reference terminal for the VGS rating and the body-diode ratings (IS, ISM, VSD). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 55 | | | V | ID=250µA, VGS=0V | 3 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.052 | | V/°C | ID=1mA, Reference to 25°C | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | | 45 | mΩ | VGS=10V, ID=16A | 3 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250µA | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 25 | µA | VDS=55V, VGS=0V | 3 |
| Drain-to-Source Leakage Current (TJ=150°C) | IDSS | | | 250 | µA | VDS=44V, VGS=0V, TJ=150°C | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V | 3 |
| Input Capacitance | Ciss | | 700 | | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Output Capacitance | Coss | | 240 | | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 100 | | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Continuous Drain Current, VGS=10V | ID | | | 27 | A | TC=25°C | 1 |
| Continuous Drain Current, VGS=10V | ID | | | 19 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | 100 | A | | 1 |
| Power Dissipation | PD | | | 68 | W | | 1 |
| Linear Derating Factor | | | | 0.45 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 65 | mJ | | 1 |
| Avalanche Current | IAR | | | 16 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 6.8 | mJ | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature, for 10 seconds | | | | 300 | °C | 1.6mm from case | 1 |
| Junction-to-Case | RθJC | | | 2.2 | °C/W | | 2 |
| Junction-to-Ambient (PCB Mount) | RθJA | | | 50 | °C/W | | 2 |
| Junction-to-Ambient | RθJA | | | 110 | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `IRFR4105TR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr4105tr-etched.step` / `irfr4105tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr4105tr.step` / `irfr4105tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755878184330113024) (11 pp, sha256 `f0ed2b50d6d825c3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfr4105tr-datasheet.pdf)