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IRFR3806TRPBF-HXY

HXY MOSFET · MOSFETs · TO-252-2L

IRFR3806TRPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage rated at ±20 V and gate threshold voltage of 1.2 V min to 2.5 V max.
2 D passive Drain of the N-channel MOSFET, with drain-source voltage rated at 60 V and continuous drain current of 50 A.
3 S passive Source of the N-channel MOSFET, with continuous source current (body diode) of 35 A max.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Single Pulse Avalanche Energy EAS 39.2 mJ VDD=25V,VGS=10V,L=0.1mH,IAS=28A 1
Avalanche Current IAS 28 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 45 W TC=25℃ 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1 inch2 FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 11 15 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 15 20 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 35 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 80 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.057 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -5.68 mV/℃ 2
Forward Transconductance gfs 45 S VDS=5V, ID=15A 2
Gate Resistance Rg 1.7 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 19.3 nC VDS=48V, VGS=4.5V, ID=15A 2
Gate-Source Charge Qgs 7.1 nC VDS=48V, VGS=4.5V, ID=15A 2
Gate-Drain Charge Qgd 7.6 nC VDS=48V, VGS=4.5V, ID=15A 2
Turn-On Delay Time Td(on) 7.2 ns VDD=30V, VGS=10V, RG=3.3, ID=15A 2
Rise Time Tr 50 ns VDD=30V, VGS=10V, RG=3.3, ID=15A 2
Turn-Off Delay Time Td(off) 36.4 ns VDD=30V, VGS=10V, RG=3.3, ID=15A 2
Fall Time Tf 7.6 ns VDD=30V, VGS=10V, RG=3.3, ID=15A 2
Input Capacitance Ciss 2423 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 145 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 97 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 16.3 nS IF=15A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 11 nC IF=15A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: IRFR3806TRPBF-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: irfr3806trpbf-hxy-etched.step / irfr3806trpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr3806trpbf-hxy.step / irfr3806trpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 42f10c8597aa77aa, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF