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IRFR3518TRPBF-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFR3518TRPBF-JSM
JSMSEMI · MOSFETs · TO-252
IRFR3518TRPBF-JSM from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) of 1.5 V to 2.5 V at ID=250 µA. |
| 2 | D | passive | Drain (also the exposed tab in the TO-252 drawing); VDS rated 100 V and continuous ID 55 A at TC=25 °C. |
| 3 | S | passive | Source; continuous body-diode forward current IS is 55 A and RDS(ON) is below 12 mΩ at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=100V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate resistance | RG | 3 | Ω | f=1 MHz, Open drain | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2.5 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source On Resistance | RDS(ON) | 10 | 12 | mΩ | VGS=10V, ID=30A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 12 | 15 | mΩ | VGS=4.5V, ID=12A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=30A | 3 | ||
| Drain-Source Voltage | VDS | 100 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | 55 | A | TC=25℃ | 1 | ||
| Pulsed drain current | ID, pulse | 165 | A | TC=25℃ | 1 | ||
| Continuous diode forward current | IS | 55 | A | TC=25℃ | 1 | ||
| Diode pulsed current | IS, pulse | 165 | A | TC=25℃ | 1 | ||
| Power dissipation | PD | 115 | W | TC=25℃ | 1 | ||
| Single pulsed avalanche energy | EAS | 14 | mJ | VDD=50 V, VGS=10 V, L=0.3 mH, starting Tj=25 °C | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RƟJC | 1.09 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RƟJA | 62 | ℃/W | 1 in2 FR-4 board, 2oz Cu, still air, Ta=25 °C | 1 | ||
| Input Capacitance | Ciss | 1550 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 680 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 65 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 16 | ns | VDS=50V, ID=25A, VGS=10V, RG=2Ω | 2 | ||
| Rise Time | tr | 4 | ns | VDS=50V, ID=25A, VGS=10V, RG=2Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 35.6 | ns | VDS=50V, ID=25A, VGS=10V, RG=2Ω | 2 | ||
| Fall Time | tf | 5.8 | ns | VDS=50V, ID=25A, VGS=10V, RG=2Ω | 2 | ||
| Total Gate Charge | Qg | 24.6 | nC | VGS=10V, VDS=50V, ID=25A | 2 | ||
| Gate-Source Charge | Qgs | 4.1 | nC | VGS=10V, VDS=50V, ID=25A | 2 | ||
| Gate-Drain Miller Charge | Qgd | 5.8 | nC | VGS=10V, VDS=50V, ID=25A | 2 | ||
| Gate plateau voltage | Vplateau | 3.1 | V | VGS=10V, VDS=50V, ID=25A | 2 | ||
| Peak reverse recovery current | Irr | 1.7 | A | VR=50V, IS=25A, dISD/dt=100 A/μs | 3 |
CAD (KiCad official)
- Symbol:
IRFR3518TRPBF-JSM - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr3518trpbf-jsm-etched.step/irfr3518trpbf-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr3518trpbf-jsm.step/irfr3518trpbf-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (6 pp, sha256
a8323bc1d436cbaa, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFR3518TRPBF-JSM
**JSMSEMI** · MOSFETs · TO-252
IRFR3518TRPBF-JSM from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) of 1.5 V to 2.5 V at ID=250 µA. |
| 2 | D | passive | Drain (also the exposed tab in the TO-252 drawing); VDS rated 100 V and continuous ID 55 A at TC=25 °C. |
| 3 | S | passive | Source; continuous body-diode forward current IS is 55 A and RDS(ON) is below 12 mΩ at VGS=10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS=0V, VDS=100V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate resistance | RG | | | 3 | Ω | f=1 MHz, Open drain | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | | 10 | 12 | mΩ | VGS=10V, ID=30A | 2 |
| Drain-Source On Resistance | RDS(ON) | | 12 | 15 | mΩ | VGS=4.5V, ID=12A | 2 |
| Source-Drain Diode Forward Voltage | VSD | | | 1.3 | V | VGS=0V, IS=30A | 3 |
| Drain-Source Voltage | VDS | | | 100 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 55 | A | TC=25℃ | 1 |
| Pulsed drain current | ID, pulse | | | 165 | A | TC=25℃ | 1 |
| Continuous diode forward current | IS | | | 55 | A | TC=25℃ | 1 |
| Diode pulsed current | IS, pulse | | | 165 | A | TC=25℃ | 1 |
| Power dissipation | PD | | | 115 | W | TC=25℃ | 1 |
| Single pulsed avalanche energy | EAS | | | 14 | mJ | VDD=50 V, VGS=10 V, L=0.3 mH, starting Tj=25 °C | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction to Case | RƟJC | | | 1.09 | ℃/W | | 1 |
| Thermal Resistance, Junction to Ambient | RƟJA | | | 62 | ℃/W | 1 in2 FR-4 board, 2oz Cu, still air, Ta=25 °C | 1 |
| Input Capacitance | Ciss | | 1550 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 680 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 65 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) | | 16 | | ns | VDS=50V, ID=25A, VGS=10V, RG=2Ω | 2 |
| Rise Time | tr | | 4 | | ns | VDS=50V, ID=25A, VGS=10V, RG=2Ω | 2 |
| Turn-Off Delay Time | td(off) | | 35.6 | | ns | VDS=50V, ID=25A, VGS=10V, RG=2Ω | 2 |
| Fall Time | tf | | 5.8 | | ns | VDS=50V, ID=25A, VGS=10V, RG=2Ω | 2 |
| Total Gate Charge | Qg | | 24.6 | | nC | VGS=10V, VDS=50V, ID=25A | 2 |
| Gate-Source Charge | Qgs | | 4.1 | | nC | VGS=10V, VDS=50V, ID=25A | 2 |
| Gate-Drain Miller Charge | Qgd | | 5.8 | | nC | VGS=10V, VDS=50V, ID=25A | 2 |
| Gate plateau voltage | Vplateau | | 3.1 | | V | VGS=10V, VDS=50V, ID=25A | 2 |
| Peak reverse recovery current | Irr | | 1.7 | | A | VR=50V, IS=25A, dISD/dt=100 A/μs | 3 |
## CAD (KiCad official)
- Symbol: `IRFR3518TRPBF-JSM`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr3518trpbf-jsm-etched.step` / `irfr3518trpbf-jsm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr3518trpbf-jsm.step` / `irfr3518trpbf-jsm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JSMSEMI datasheet](docs/irfr3518trpbf-jsm-datasheet.pdf) (6 pp, sha256 `a8323bc1d436cbaa`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfr3518trpbf-jsm-datasheet.pdf)