component
IRFR3411TRPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
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| irfr3411trpbf-hxy-etched.glb | 12d ago |
| irfr3411trpbf-hxy-etched.step | 12d ago |
| irfr3411trpbf-hxy-hero.glb | 12d ago |
| irfr3411trpbf-hxy-hero.overlay.json | 12d ago |
| irfr3411trpbf-hxy.glb | 12d ago |
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| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
IRFR3411TRPBF-HXY
HXY MOSFET · MOSFETs · TO-252-2L
IRFR3411TRPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; VGS is rated ±20V, and the gate threshold VGS(th) is 1.0V to 2.2V at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain terminal; VDS is rated 100V and continuous ID is 30A at TC=25℃, limited by the maximum junction temperature. |
| 3 | S | passive | Source terminal, the reference for VGS and the body diode; maximum continuous diode forward current IS is 27A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 30 | A | Tc=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 13 | A | Tc=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 30 | mJ | 1 | |||
| Total Power Dissipation | PD | 42 | W | Tc=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V, | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 37 | 48 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 39 | 55 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 27 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 80 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A | 2 |
CAD (KiCad official)
- Symbol:
IRFR3411TRPBF-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
irfr3411trpbf-hxy-etched.step/irfr3411trpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr3411trpbf-hxy.step/irfr3411trpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
8c0094f6b77626fd, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).