# IRFR2405TR

**UMW** · MOSFETs · TO-252

IRFR2405TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet's absolute maximum gate-to-source voltage is VGS = ±20 V. |
| 2 | D | passive | DRAIN terminal; the datasheet rates continuous drain current at 56 A (VGS = 10 V, TC = 25°C) with VDS = 55 V. |
| 3 | S | passive | SOURCE terminal; the datasheet rates continuous source (body diode) current IS at 62 A, with pulsed source current ISM at 170 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 55 |  |  | V | ID=250µA, VGS=0V | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  | 11.8 | 16 | mΩ | VGS=10V, ID=34A | 3 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=10V, ID=250μA | 3 |
| Forward Transconductance | gFS | 30 |  |  | S | VDS=25V, ID=34A | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | 20 | µA | VDS=55V, VGS=0V | 3 |
| Drain-to-Source Leakage Current at TJ=150°C | IDSS |  |  | 250 | µA | VDS=44V, VGS=0V, TJ=150°C | 3 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 200 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | -200 | nA | VGS=-20V | 3 |
| Total Gate Charge | Qg |  | 70 | 110 | nC | ID=34A, VDS=44V, VGS=10V ④ | 3 |
| Gate-to-Source Charge | Qgs |  | 16 | 23 | nC | ID=34A, VDS=44V, VGS=10V ④ | 3 |
| Gate-to-Drain (Miller) Charge | Qgd |  | 19 | 29 | nC | ID=34A, VDS=44V, VGS=10V ④ | 3 |
| Continuous Drain Current, VGS=10V | ID |  |  | 56 | A | TC=25°C | 1 |
| Continuous Drain Current, VGS=10V | ID |  |  | 40 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 220 | A |  | 1 |
| Power Dissipation | PD |  |  | 110 | W | TC=25°C | 1 |
| Linear Derating Factor |  |  |  | 0.71 | W/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 130 | mJ | Starting TJ=25°C, L=0.22mH, RG=25Ω, IAS=34A | 1 |
| Avalanche Current | IAR |  |  | 34 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 11 | mJ |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns | ISD ≤ 34A, di/dt ≤ 190A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Soldering Temperature, for 10 seconds |  |  |  | 300 | °C | 1.6mm from case | 1 |
| Junction-to-Case | RθJC |  |  | 1.4 | °C/W |  | 2 |
| Junction-to-Ambient (PCB Mount) | RθJA |  |  | 50 | °C/W | PCB mount | 2 |
| Junction-to-Ambient | RθJA |  |  | 110 | °C/W |  | 2 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ |  | 0.052 |  | V/°C | ID=1mA, Reference to 25°C | 3 |
| Turn-On Delay Time | tD(on) |  | 15 |  | ns | VDD=28V, ID=34A, RG=6.8Ω, VGS=10V ④ | 3 |
| Rise Time | tr |  | 130 |  | ns | VDD=28V, ID=34A, RG=6.8Ω, VGS=10V ④ | 3 |
| Turn-Off Delay Time | tD(off) |  | 55 |  | ns | VDD=28V, ID=34A, RG=6.8Ω, VGS=10V ④ | 3 |
| Fall Time | tf |  | 78 |  | ns | VDD=28V, ID=34A, RG=6.8Ω, VGS=10V ④ | 3 |
| Input Capacitance | Ciss |  | 2430 |  | pF | VGS=0V, VDS=25V, ƒ=1MHz, See Fig. 5 | 3 |
| Output Capacitance | Coss |  | 470 |  | pF | VGS=0V, VDS=25V, ƒ=1MHz, See Fig. 5 | 3 |
| Reverse Transfer Capacitance | Crss |  | 100 |  | pF | VGS=0V, VDS=25V, ƒ=1MHz, See Fig. 5 | 3 |
| Output Capacitance | Coss |  | 2040 |  | pF | VGS=0V, VDS=1V, ƒ=1MHz | 3 |
| Output Capacitance | Coss |  | 350 |  | pF | VGS=0V, VDS=44V, ƒ=1MHz | 3 |
| Effective Output Capacitance ⑤ | Coss eff. |  | 350 |  | pF | VGS=0V, VDS=0V to 44V | 3 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | TJ=25°C, IS=34A, VGS=0V ④ | 4 |
| Reverse Recovery Time | trr |  | 93 |  | ns | TJ=25°C, IF=34A, dI/dt=100A/μs ④ | 4 |
| Reverse Recovery Charge | Qrr |  | 260 |  | nC | TJ=25°C, IF=34A, dI/dt=100A/μs ④ | 4 |

## CAD (KiCad official)

- Symbol: `IRFR2405TR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr2405tr-etched.step` / `irfr2405tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr2405tr.step` / `irfr2405tr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](docs/irfr2405tr-datasheet.pdf) (11 pp, sha256 `16c59dfa50f48c03`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfr2405tr-datasheet.pdf)