IRFR2307ZTRPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V.
2	D	passive	Drain of the N-channel MOSFET, rated for 100 V drain-source voltage.
3	S	passive	Source of the N-channel MOSFET, which is the body diode anode side.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			100	V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	TA = 25 °C	1
Continuous Drain Current	ID			9.2	A	TA = 25 °C, TJ = 150 °C, surface mounted on 1x1 FR4	1
Continuous Drain Current	ID			6.8	A	TA = 100 °C, TJ = 150 °C, surface mounted on 1x1 FR4	1
Continuous Source-Drain Diode Current	IS			2	A	TA = 25 °C	1
Avalanche Energy	EAS			101	mJ	L = 0.1 mH	1
Maximum Power Dissipation	PD			136.4	W	TC = 25 °C	1
Maximum Power Dissipation	PD			68.2	W	TC = 100 °C	1
Maximum Power Dissipation	PD			3	W	TA = 25 °C	1
Maximum Power Dissipation	PD			1.5	W	TA = 100 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		1
Junction-to-Ambient Thermal Resistance	RthJA		40	50	°C/W	Steady state, surface mounted on 1x1 FR4	1
Junction-to-Case Thermal Resistance	RthJC		0.85	1.1	°C/W		1
Drain-Source Breakdown Voltage	VDS	100			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	2.5		5	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Drain-Source On-State Resistance	RDS(on)		0.0185		Ω	VGS = 10 V, ID = 15 A	2
Forward Transconductance	gfs		33		S	VDS = 15 V, ID = 15 A	2
Gate Resistance	Rg		1.6	2.5	Ω	f = 1 MHz	2
Turn-On Delay Time	td(on)		12	20	ns	VDD = 50 V, RL = 1 Ω, VGEN = 10 V, Rg = 1 Ω	2
Rise Time	tr		10	20	ns	VDD = 50 V, RL = 1 Ω, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		18	35	ns	VDD = 50 V, RL = 1 Ω, VGEN = 10 V, Rg = 1 Ω	2
Fall Time	tf		8	15	ns	VDD = 50 V, RL = 1 Ω, VGEN = 10 V, Rg = 1 Ω	2
Pulse Diode Forward Current	ISM			100	A		2
Body Diode Voltage	VSD		0.85	1.5	V	IS = 15 A	2
Body Diode Reverse Recovery Time	trr		80	120	ns	IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		160	240	nC	IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Total Gate Charge	Qg		38		nC	VDS = 50 V, VGS = 10 V, ID = 50 A	2
Gate-Source Charge	Qgs		14		nC	VDS = 50 V, VGS = 10 V, ID = 50 A	2

CAD (KiCad official)

Symbol: IRFR2307ZTRPBF-VB
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: irfr2307ztrpbf-vb-etched.step / irfr2307ztrpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr2307ztrpbf-vb.step / irfr2307ztrpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (8 pp, sha256 6aed5cc1856c21a3, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IRFR2307ZTRPBF-VB

Verified IRFR2307ZTRPBF-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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