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IRFR220NTRPBF-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirfr220ntrpbf-vbfactory-2.0.0extractor-text

Verified IRFR220NTRPBF-VB

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IRFR220NTRPBF-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-a77jgfr5/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ irfr220ntrpbf-vb.kicad_sym✓ irfr220ntrpbf-vb.kicad_mod✓ irfr220ntrpbf-vb.step
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Ray Publish 0.1.0 4baa69b 1d ago

IRFR220NTRPBF-VB

VBsemi Elec · MOSFETs · TO-252

IRFR220NTRPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V (VGS).
2 D passive Drain terminal, rated for 200 V drain-source voltage (VDS), and the drain is the case/tab used for the junction-to-case (drain) thermal path.
3 S passive Source terminal, carrying the source-drain diode with a continuous source current (IS) of 6 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 7 A TJ = 175 °C, TC = 125 °C 1
Pulsed Drain Current IDM 12 A 1
Continuous Source Current (Diode Conduction) IS 6 A 1
Avalanche Current IAS 6 A 1
Single Pulse Avalanche Energy EAS 18 mJ L = 0.1 mH 1
Maximum Power Dissipation (TC) PD 96 W TC = 25 °C 1
Maximum Power Dissipation (TA) PD 3 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance (10 s) RthJA 15 18 °C/W t 10 s 1
Junction-to-Ambient Thermal Resistance (steady state) RthJA 40 50 °C/W Steady State 1
Junction-to-Case (Drain) Thermal Resistance RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 200 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 125 °C) IDSS 50 µA VDS = 200 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (TJ = 175 °C) IDSS 250 µA VDS = 200 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 40 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance (TJ = 25 °C) RDS(on) 0.29 Ω VGS = 10 V, ID = 3 A, TJ = 25 °C 2
Drain-Source On-State Resistance (TJ = 175 °C) RDS(on) 0.32 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Rise Time tr 50 75 ns VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 60 90 ns VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Pulsed Current ISM 5 A 2
Diode Forward Voltage VSD 0.9 1.5 V IF = 3 A, VGS = 0 V 2
Source-Drain Reverse Recovery Time trr 180 250 ns IF = 3 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: IRFR220NTRPBF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr220ntrpbf-vb-etched.step / irfr220ntrpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr220ntrpbf-vb.step / irfr220ntrpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 95447781dccd09db, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF