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IRFR1N60ATRPBF-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFR1N60ATRPBF-VB

VBsemi Elec · MOSFETs · TO-252

IRFR1N60ATRPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage limited to ±30 V.
2 D passive Drain terminal, rated for 650 V drain-source voltage and 1.6 A continuous drain current at TC = 100 °C.
3 S passive Source terminal, with a continuous source-drain diode current IS of 4 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current at TJ = 125 °C IDSS 250 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 3.9 S VDS = 50 V, ID = 3.1 A 2
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 µA 2
Total Gate Charge Qg 15 nC ID = 3.2 A, VDS = 400 V, VGS = 10 V (see fig. 6 and 13b) 2
Gate-Drain Charge Qgd 6 nC ID = 3.2 A, VDS = 400 V, VGS = 10 V (see fig. 6 and 13b) 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 3.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 493 739 ns TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 2.1 3.2 µC TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 1.6 A TC = 100 °C 1
Pulsed Drain Current IDM 8 A 1
Linear Derating Factor 0.48 W/°C 1
Single Pulse Avalanche Energy EAS 165 mJ Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A 1
Repetitive Avalanche Current IAR 2 A 1
Maximum Power Dissipation PD 60 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 2.8 V/ns ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 1.6 mm from case, for 10 s 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Mounting Torque 1.1 N·m 6-32 or M3 screw 1
Maximum Junction-to-Ambient Thermal Resistance RthJA 65 °C/W 2
Maximum Junction-to-Case (Drain) Thermal Resistance RthJC 2.1 °C/W 2

CAD (KiCad official)

  • Symbol: IRFR1N60ATRPBF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr1n60atrpbf-vb-etched.step / irfr1n60atrpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr1n60atrpbf-vb.step / irfr1n60atrpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 fcce4f712b270221, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF