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IRFR120NTRPBF-ES

Public Made by Adom

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ElecSuper MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFR120NTRPBF-ES

ElecSuper · MOSFETs · TO-252

IRFR120NTRPBF-ES from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the gate-source voltage is limited to ±20 V (VGS).
2 Drain passive Drain terminal of the MOSFET; the drain-source breakdown voltage is rated 100 V (BVDSS).
3 Source passive Source terminal of the MOSFET, the reference for VGS, with continuous drain current rated 9 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=100V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.5 2.5 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 100 115 mΩ VGS=10V, ID=5A 3
Drain-to-source On-resistance RDS(on) 110 140 mΩ VGS=4.5V, ID=3A 3
Forward Trans conductance gFS 40 S VDS=5.0V, ID=5A 3
Input Capacitance CISS 605 pF VGS=0V, f=1MHz, VDS=25V 3
Output Capacitance COSS 40 pF VGS=0V, f=1MHz, VDS=25V 3
Reverse Transfer Capacitance CRSS 23 pF VGS=0V, f=1MHz, VDS=25V 3
Total Gate Charge QG(TOT) 11 nC VGS=10V, VDS=30V, ID=5A 3
Gate-to-Source Charge QGS 2.1 nC VGS=10V, VDS=30V, ID=5A 3
Gate-to-Drain Charge QGD 2.4 nC VGS=10V, VDS=30V, ID=5A 3
Turn-On Delay Time td(ON) 6.8 ns VGS=10V, VDS=30V, ID=5A, RGEN=3Ω 3
Rise Time tr 5 ns VGS=10V, VDS=30V, ID=5A, RGEN=3Ω 3
Turn-Off Delay Time td(OFF) 15.8 ns VGS=10V, VDS=30V, ID=5A, RGEN=3Ω 3
Fall Time tf 6 ns VGS=10V, VDS=30V, ID=5A, RGEN=3Ω 3
Forward Voltage VSD 0.45 1.5 V VGS=0V, IS=1A 3
Drain-Source Voltage BVDSS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 9 A TC=25°C 2
Continuous Drain Current ID 7 A TC=75°C 2
Maximum Power Dissipation PD 20 W TC=25°C 2
Pulsed Drain Current IDM 36 A 2
Avalanche Current Single Pulsed IAS 10.5 A Single Pulsed 2
Avalanche energy Single Pulsed EAS 16 mJ Single Pulsed 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Case Thermal Resistance RθJC 6.3 °C/W t ≤ 10 s 2

CAD (KiCad official)

  • Symbol: IRFR120NTRPBF-ES
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr120ntrpbf-es-etched.step / irfr120ntrpbf-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr120ntrpbf-es.step / irfr120ntrpbf-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (8 pp, sha256 461fefe4f54f5e25, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF