component
IRFR120NPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFR120NPBF-HXY
HXY MOSFET · MOSFETs · TO-252-2L
IRFR120NPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, threshold 1.0 to 2.5 V at VGS=VDS, ID=250uA. |
| 2 | D | passive | Drain; drain-source voltage rated 100 V, continuous drain current 15 A at TC=25℃ (tab connection not stated in the text). |
| 3 | S | passive | Source; continuous source current (body diode) up to 12 A, diode forward voltage max 1.2 V at IS=1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 100 | 112 | mΩ | VGS=10V , ID=10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 117 | 130 | mΩ | VGS=4.5V , ID=8A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS , ID =250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=80V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 12 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 24 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 15 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 7.7 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 24 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 6.1 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=11A | 1 | ||
| Avalanche Current | IAS | 11 | A | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 34.7 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.098 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -4.57 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 13 | S | VDS=5V , ID=10A | 2 | ||
| Gate Resistance | Rg | 2 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg | 26.2 | nC | VDS=80V , VGS=10V , ID=10A | 2 | ||
| Gate-Source Charge | Qgs | 4.6 | nC | VDS=80V , VGS=10V , ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 5.1 | nC | VDS=80V , VGS=10V , ID=10A | 2 | ||
| Turn-On Delay Time | Td(on) | 4.2 | ns | VDD=50V , VGS=10V , RG=3.3 , ID=10A | 2 | ||
| Rise Time | Tr | 8.2 | ns | VDD=50V , VGS=10V , RG=3.3 , ID=10A | 2 | ||
| Turn-Off Delay Time | Td(off) | 35.6 | ns | VDD=50V , VGS=10V , RG=3.3 , ID=10A | 2 | ||
| Fall Time | Tf | 9.6 | ns | VDD=50V , VGS=10V , RG=3.3 , ID=10A | 2 | ||
| Input Capacitance | Ciss | 1535 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 60 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 37 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 37 | nS | IF=10A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 27.3 | nC | IF=10A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
IRFR120NPBF-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
irfr120npbf-hxy-etched.step/irfr120npbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr120npbf-hxy.step/irfr120npbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
bf01657a09bb625e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).