component

IRFR024NTRPBF-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirfr024ntrpbf-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers irfr024ntrpbf-hxy: viewers · Ray 17d ago
irfr024ntrpbf-hxy-etched.glb Publish 0.1.0 · Ray 17d ago
irfr024ntrpbf-hxy-etched.step irfr024ntrpbf-hxy: factory component page (tier=lcsc) · Ray 17d ago
irfr024ntrpbf-hxy-hero.glb irfr024ntrpbf-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
irfr024ntrpbf-hxy-hero.overlay.json Publish 0.1.0 · Ray 17d ago
irfr024ntrpbf-hxy.glb Publish 0.1.0 · Ray 17d ago
irfr024ntrpbf-hxy.kicad_mod Publish 0.1.0 · Ray 17d ago
irfr024ntrpbf-hxy.kicad_sym Publish 0.1.0 · Ray 17d ago
irfr024ntrpbf-hxy.lbr Publish 0.1.0 · Ray 17d ago
irfr024ntrpbf-hxy.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

IRFR024NTRPBF-HXY

HXY MOSFET · MOSFETs · TO252-2L

IRFR024NTRPBF-HXY from HXY MOSFET, in a TO252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±20 V (VGS), and operation is specified down to 4.5 V gate drive.
2 D passive Drain of the N-channel MOSFET; rated for a drain-source voltage of 60 V (VDS) and a continuous drain current of 30 A at TC=25℃ with VGS=10 V.
3 S passive Source of the N-channel MOSFET; the datasheet gives a continuous source current limit of 23 A (IS) and a pulsed source current of 46 A (ISM).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Static Drain-Source On-Resistance (VGS=10V) RDS(ON) 22 26 mΩ VGS=10V, ID=15A; pulsed, pulse width ≤300us, duty cycle ≤2% 2
Static Drain-Source On-Resistance (VGS=4.5V) RDS(ON) 30 38 mΩ VGS=4.5V, ID=10A; pulsed, pulse width ≤300us, duty cycle ≤2% 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 23 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 46 A pulsed, pulse width ≤300us, duty cycle ≤2% 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃; pulsed, pulse width ≤300us, duty cycle ≤2% 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 30 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 15 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 46 A 1
Single Pulse Avalanche Energy EAS 25.5 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=22.6A 1
Avalanche Current IAS 22.6 A 1
Total Power Dissipation (TC=25℃) PD@TC=25℃ 34.7 W TC=25℃ 1
Total Power Dissipation (TA=25℃) PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1

CAD (KiCad official)

  • Symbol: IRFR024NTRPBF-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO252-2L (KiCad packages3D, STEP)
  • 3D model files: irfr024ntrpbf-hxy-etched.step / irfr024ntrpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr024ntrpbf-hxy.step / irfr024ntrpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7b2734fcdab813ca, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF