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Contents

README

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IRFR024NTRPBF-ES

ElecSuper · MOSFETs · TO-252

IRFR024NTRPBF-ES from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with VGS rated at ±20 V maximum and threshold of 1.0 to 2.5 V.
2 Drain passive Drain terminal with BVDSS of 60 V and continuous drain current of 20 A at TC=25°C.
3 Source passive Source terminal of the N-channel MOSFET, with body diode forward voltage of 0.7 V typical (1.5 V max) at IS=10 A.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.6 2.5 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 26 33 mΩ VGS=10V, ID=20A 3
Drain-to-source On-resistance RDS(on) 33 45 mΩ VGS=4.5V, ID=10A 3
Body Diode Forward Voltage VSD 0.7 1.5 V VGS=0V, IS=10A 3
Drain-Source Voltage BVDSS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 20 A TC=25°C 2
Continuous Drain Current ID 16 A TC=75°C 2
Maximum Power Dissipation PD 25 W 2
Pulsed Drain Current IDM 80 A 2
Avalanche Current, Single Pulsed IAS 16 A Tj=25℃, VDD=60V, VG=10V, L=0.3mH, Rg=25Ω 2
Avalanche Energy, Single Pulsed EAS 16 mJ Tj=25℃, VDD=60V, VG=10V, L=0.3mH, Rg=25Ω 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Case Thermal Resistance Steady State RθJC 5 ℃/W Steady State 2
Forward Transconductance gFS 40 S VDS=5.0V, ID=20A 3
Input Capacitance CISS 860 pF VGS=0V, f=1MHz, VDS=25V 3
Output Capacitance COSS 62 pF VGS=0V, f=1MHz, VDS=25V 3
Reverse Transfer Capacitance CRSS 51 pF VGS=0V, f=1MHz, VDS=25V 3
Total Gate Charge QG(TOT) 20.3 nC VGS=10V, VDS=30V, ID=10A 3
Gate-to-Source Charge QGS 3.8 nC VGS=10V, VDS=30V, ID=10A 3
Gate-to-Drain Charge QGD 5.5 nC VGS=10V, VDS=30V, ID=10A 3
Turn-On Delay Time td(ON) 6 ns VGS=10V, VDS=30V, ID=5A, RG=1.8Ω 3
Rise Time tr 6 ns VGS=10V, VDS=30V, ID=5A, RG=1.8Ω 3
Turn-Off Delay Time td(OFF) 19 ns VGS=10V, VDS=30V, ID=5A, RG=1.8Ω 3
Fall Time tf 3 ns VGS=10V, VDS=30V, ID=5A, RG=1.8Ω 3

CAD (KiCad official)

  • Symbol: IRFR024NTRPBF-ES
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr024ntrpbf-es-etched.step / irfr024ntrpbf-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr024ntrpbf-es.step / irfr024ntrpbf-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (9 pp, sha256 01f35bb3dcb64ac5, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF