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Contents

README

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IRFP4227PBF

Infineon Technologies · MOSFETs · TO-247AC

IRFP4227PBF from Infineon Technologies, in a TO-247AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-to-source voltage is rated at ±30 V in the absolute maximum ratings.
2 D passive Drain terminal; rated for VDS max 200 V with continuous drain current of 46 A at TC = 25°C (VGS @ 10V).
3 S passive Source terminal; continuous source (body diode) current is rated at 65 A at TC = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247AC
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 200 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 21 25 mΩ VGS = 10V, ID = 46A 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 200V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 1 mA VDS = 200V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 49 S VDS = 25V, ID = 46A 2
Total Gate Charge Qg 70 98 nC VDD = 100V, ID = 46A, VGS = 10V 2
Shoot Through Blocking Time tst 100 ns 2
Continuous Source Current (Body Diode) IS 65 A TC = 25°C 2
Pulsed Source Current (Body Diode) ISM 260 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 46A, VGS = 0V 2
Reverse Recovery Time trr 100 150 ns TJ = 25°C, IF = 46A, VDD = 50V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 430 640 nC TJ = 25°C, IF = 46A, VDD = 50V, di/dt = 100A/µs 2
Gate-to-Source Voltage VGS -30 30 V 1
Continuous Drain Current, VGS @ 10V ID 65 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V ID 46 A TC = 100°C 1
Pulsed Drain Current IDM 260 A 1
Repetitive Peak Current IRP 130 A TC = 100°C 1
Power Dissipation PD 330 W TC = 25°C 1
Power Dissipation PD 190 W TC = 100°C 1
Linear Derating Factor 2.2 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -40 175 °C 1
Soldering Temperature 300 °C for 10 seconds 1
Mounting Torque, 6-32 or M3 Screw 1.1 Nm printed as 10lbin (1.1Nm) 1
Junction-to-Case RθJC 0.45 °C/W 1
Junction-to-Ambient RθJA 62 °C/W 1
Case-to-Sink, Flat, Greased Surface RθCS 0.5 °C/W 1

CAD (KiCad official)

  • Symbol: IRFP4227PBF
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247AC (KiCad packages3D, STEP)
  • 3D model files: irfp4227pbf-etched.step / irfp4227pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfp4227pbf.step / irfp4227pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 5acee2d999fe0b2f, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF