component
IRFI740GPBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFI740GPBF
Vishay Intertech · MOSFETs · TO-220
IRFI740GPBF from Vishay Intertech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V maximum and a threshold of 2.0 to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain; rated for VDS = 400 V with continuous current of 5.4 A at TC = 25 °C and a pulsed current of 22 A. |
| 3 | S | passive | Source; the body diode carries a continuous source current of 5.4 A and a pulsed current of 22 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 400 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 5.4 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 3.4 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 22 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 390 | mJ | note b: VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 5.4 A | 1 | ||
| Repetitive Avalanche Current | IAR | 5.4 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 4 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 40 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 4 | V/ns | see note c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | for 10 s; note d: 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 3.1 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 400 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 400 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 320 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.55 | Ω | VGS = 10 V, ID = 3.2 A | 2 | ||
| Forward Transconductance | gfs | 3.6 | S | VDS = 50 V, ID = 3.2 A | 2 | ||
| Gate Input Resistance | Rg | 0.2 | 1.3 | Ω | f = 1 MHz, open drain | 2 | |
| Continuous Source-Drain Diode Current | IS | 5.4 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 22 | A | 2 | |||
| Body Diode Voltage | VSD | 2 | V | TJ = 25 °C, IS = 5.4 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 330 | 730 | ns | TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 2.8 | 6.6 | μC | TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs | 2 | |
| Total Gate Charge | Qg | 66 | nC | VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13 | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13 | 2 | ||
| Gate-Drain Charge | Qgd | 33 | nC | VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13 | 2 | ||
| Linear Derating Factor | 0.32 | W/°C | 1 |
CAD (KiCad official)
- Symbol:
IRFI740GPBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irfi740gpbf-etched.step/irfi740gpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfi740gpbf.step/irfi740gpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
3f0a6e09927a3c9b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFI740GPBF
**Vishay Intertech** · MOSFETs · TO-220
IRFI740GPBF from Vishay Intertech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V maximum and a threshold of 2.0 to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain; rated for VDS = 400 V with continuous current of 5.4 A at TC = 25 °C and a pulsed current of 22 A. |
| 3 | S | passive | Source; the body diode carries a continuous source current of 5.4 A and a pulsed current of 22 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 400 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 5.4 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 3.4 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 22 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 390 | mJ | note b: VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 5.4 A | 1 |
| Repetitive Avalanche Current | IAR | | | 5.4 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 4 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 40 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | | | 4 | V/ns | see note c | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Recommendations (Peak temperature) | | | | 300 | °C | for 10 s; note d: 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 65 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 3.1 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | 400 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 25 | μA | VDS = 400 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | μA | VDS = 320 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.55 | Ω | VGS = 10 V, ID = 3.2 A | 2 |
| Forward Transconductance | gfs | 3.6 | | | S | VDS = 50 V, ID = 3.2 A | 2 |
| Gate Input Resistance | Rg | 0.2 | | 1.3 | Ω | f = 1 MHz, open drain | 2 |
| Continuous Source-Drain Diode Current | IS | | | 5.4 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Pulsed Diode Forward Current | ISM | | | 22 | A | | 2 |
| Body Diode Voltage | VSD | | | 2 | V | TJ = 25 °C, IS = 5.4 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 330 | 730 | ns | TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 2.8 | 6.6 | μC | TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs | 2 |
| Total Gate Charge | Qg | | | 66 | nC | VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13 | 2 |
| Gate-Source Charge | Qgs | | | 10 | nC | VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13 | 2 |
| Gate-Drain Charge | Qgd | | | 33 | nC | VGS = 10 V, ID = 10 A, VDS = 320 V, see fig. 6 and 13 | 2 |
| Linear Derating Factor | | | 0.32 | | W/°C | | 1 |
## CAD (KiCad official)
- Symbol: `IRFI740GPBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irfi740gpbf-etched.step` / `irfi740gpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfi740gpbf.step` / `irfi740gpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897145080856576) (8 pp, sha256 `3f0a6e09927a3c9b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfi740gpbf-datasheet.pdf)