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IRFI640GPBF-VB

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VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFI640GPBF-VB

VBsemi Elec · MOSFETs · TO-220F

IRFI640GPBF-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; VGS is rated at ±20 V maximum, and the gate threshold voltage VGS(th) is 2.0 V to 4.0 V at ID = 250 µA.
2 D passive Drain terminal, rated for a drain-source voltage VDS of 200 V and is internally connected to the heatsink tab, which is isolated from the leads (2.5 kVRMS isolation).
3 S passive Source terminal; the body diode forward voltage VSD is at most 2.5 V at IS = 7.2 A with VGS = 0 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 8 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 15 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 32 A 1
Linear Derating Factor 0.24 W/°C 1
Single Pulse Avalanche Energy EAS 36 mJ 1
Repetitive Avalanche Current IAR 7.2 A 1
Repetitive Avalanche Energy EAR 3.7 mJ 1
Maximum Power Dissipation PD 37 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Mounting Torque 10 lbf · in 6-32 or M3 screw 1
Mounting Torque 1.1 N · m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 65 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 4.1 °C/W 2
Drain-Source Breakdown Voltage VDS 200 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 160 V, VGS = 0 V, TJ = 150 °C 2
Forward Transconductance gfs 2.3 S VDS = 50 V, ID = 4.3 A 2
Total Gate Charge Qg 16 nC ID = 9.2 A, VDS = 80 V, VGS = 10 V 2
Gate-Source Charge Qgs 4.4 nC 2
Gate-Drain Charge Qgd 7.7 nC 2
Body Diode Voltage VSD 2.5 V TJ = 25 °C, IS = 7.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 130 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 0.65 1.3 µC 2
VDS Temperature Coefficient ΔVDS/TJ 0.13 V/°C Reference to 25 °C, ID = 1 mA 2
Drain-Source On-State Resistance RDS(on) 0.2 Ω VGS = 10 V, ID = 4.3 A 2
Input Capacitance Ciss 60 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Drain to Sink Capacitance 12 pF f = 1.0 MHz 2
Turn-On Delay Time td(on) 8.8 ns VDD = 100 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω 2
Rise Time tr 30 ns VDD = 100 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω 2
Turn-Off Delay Time td(off) 19 ns VDD = 100 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω 2
Fall Time tf 20 ns VDD = 100 V, ID = 9.2 A, RG = 18 Ω, RD = 5.2 Ω 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH 2

CAD (KiCad official)

  • Symbol: IRFI640GPBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 c555ab9746342eea, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF