component

IRFBF20PBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirfbf20pbffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers irfbf20pbf: viewers · Ray 17d ago
irfbf20pbf-etched.glb Publish 0.1.0 · Ray 17d ago
irfbf20pbf-etched.step irfbf20pbf: factory component page (tier=lcsc) · Ray 17d ago
irfbf20pbf-hero.glb irfbf20pbf: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
irfbf20pbf-hero.overlay.json Publish 0.1.0 · Ray 17d ago
irfbf20pbf.glb Publish 0.1.0 · Ray 17d ago
irfbf20pbf.kicad_mod Publish 0.1.0 · Ray 17d ago
irfbf20pbf.kicad_sym Publish 0.1.0 · Ray 17d ago
irfbf20pbf.lbr Publish 0.1.0 · Ray 17d ago
irfbf20pbf.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

IRFBF20PBF

Vishay Intertech · MOSFETs · TO-220AB

IRFBF20PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives the gate-source voltage limit as VGS = ±20 V.
2 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage VDS of 900 V and continuous drain current ID of 1.7 A at TC = 25 °C; the datasheet also refers to the drain as the case (RthJC is quoted to the drain).
3 S passive Source of the N-channel MOSFET, which forms the integral body diode with a continuous source-drain diode current IS of 1.7 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 900 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 1.7 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 1.1 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 6.8 A 1
Linear Derating Factor 0.43 W/°C 1
Single Pulse Avalanche Energy EAS 180 mJ VDD = 50 V, starting TJ = 25 °C, L = 117 mH, Rg = 25 Ω, IAS = 1.7 A 1
Repetitive Avalanche Current IAR 1.7 A 1
Repetitive Avalanche Energy EAR 5.4 mJ 1
Maximum Power Dissipation PD 54 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 1.5 V/ns ISD 1.7 A, dI/dt 70 A/µs, VDD 600 V, TJ 150 °C (inequality signs missing in source text) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Mounting Torque 1.1 N·m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 2.3 °C/W 2
Drain-Source Breakdown Voltage VDS 900 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = 900 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 µA VDS = 720 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 8 Ω VGS = 10 V, ID = 1.0 A 2
Forward Transconductance gfs 0.6 S VDS = 100 V, ID = 1.0 A 2
Total Gate Charge Qg 38 nC VGS = 10 V, ID = 1.7 A, VDS = 360 V 2
Gate-Source Charge Qgs 4.7 nC VGS = 10 V, ID = 1.7 A, VDS = 360 V 2
Gate-Drain Charge Qgd 21 nC VGS = 10 V, ID = 1.7 A, VDS = 360 V 2
Continuous Source-Drain Diode Current IS 1.7 A 2
Pulsed Diode Forward Current ISM 6.8 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 1.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 350 530 ns TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 0.85 1.3 nC TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: IRFBF20PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfbf20pbf-etched.step / irfbf20pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfbf20pbf.step / irfbf20pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 c0fef80e592b4e4d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF