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IRFBE30PBF

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFBE30PBF

Vishay Intertech · MOSFETs · TO-220AB

IRFBE30PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated for VGS of ±20 V (absolute maximum) with a gate-source threshold VGS(th) of 2.0 V to 4.0 V.
2 D passive Drain of the N-channel MOSFET, rated for VDS of 800 V with continuous drain current ID of 4.1 A at TC = 25 °C; the drain is also the case/tab per the drain-referenced thermal resistance RthJC.
3 S passive Source of the N-channel MOSFET, carrying the body diode continuous source-drain current IS of 4.1 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 800 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 4.1 A VGS at 10 V, TC = 25 °C 1
Continuous drain current ID 2.6 A VGS at 10 V, TC = 100 °C 1
Pulsed drain current IDM 16 A 1
Linear derating factor 1 W/°C 1
Single pulse avalanche energy EAS 260 mJ 1
Repetitive avalanche current IAR 4.1 A 1
Repetitive avalanche energy EAR 13 mJ 1
Maximum power dissipation PD 125 W TC = 25 °C 1
Peak diode recovery dV/dt dV/dt 2 V/ns 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 300 °C For 10 s, 1.6 mm from case 1
Maximum junction-to-ambient thermal resistance RthJA 62 °C/W 2
Maximum junction-to-case (drain) thermal resistance RthJC 1 °C/W 2
Drain-source breakdown voltage VDS 800 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero gate voltage drain current IDSS 100 μA VDS = 800 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 500 μA VDS = 640 V, VGS = 0 V, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 3 Ω VGS = 10 V, ID = 2.5 A 2
Forward transconductance gfs 2.5 S VDS = 100 V, ID = 2.5 A 2
Gate input resistance Rg 0.6 1.6 Ω f = 1 MHz, open drain 2
Total gate charge Qg 78 nC VGS = 10 V, ID = 4.1 A, VDS = 400 V 2
Gate-source charge Qgs 9.6 nC VGS = 10 V, ID = 4.1 A, VDS = 400 V 2
Gate-drain charge Qgd 45 nC VGS = 10 V, ID = 4.1 A, VDS = 400 V 2
Continuous source-drain diode current IS 4.1 A 2
Pulsed diode forward current ISM 16 A 2
Body diode voltage VSD 1.8 V TJ = 25 °C, IS = 4.1 A, VGS = 0 V 2
Body diode reverse recovery time trr 480 720 ns TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 1.8 2.7 μC TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μs 2
Case-to-sink, flat, greased surface thermal resistance RthCS 0.5 °C/W 2
VDS temperature coefficient ΔVDS/TJ 0.9 V/°C Reference to 25 °C, ID = 1 mA 2
Input capacitance Ciss 1300 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output capacitance Coss 310 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse transfer capacitance Crss 190 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Turn-on delay time td(on) 12 ns VDD = 400 V, ID = 4.1 A, Rg = 12 Ω, RD = 95 Ω 2
Rise time tr 33 ns VDD = 400 V, ID = 4.1 A, Rg = 12 Ω, RD = 95 Ω 2
Turn-off delay time td(off) 82 ns VDD = 400 V, ID = 4.1 A, Rg = 12 Ω, RD = 95 Ω 2
Fall time tf 30 ns VDD = 400 V, ID = 4.1 A, Rg = 12 Ω, RD = 95 Ω 2
Internal drain inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal source inductance LS 7.5 nH 2

CAD (KiCad official)

  • Symbol: IRFBE30PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfbe30pbf-etched.step / irfbe30pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfbe30pbf.step / irfbe30pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 8074b4639ab4bd91, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF