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IRFBC30PBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFBC30PBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRFBC30PBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated for a gate-source voltage of ±30 V (VGS), with total gate charge Qg of 48 nC maximum.
2 D passive Drain of the N-channel MOSFET, rated for 650 V drain-source voltage (VDS) and 4.2 A continuous drain current at TC = 100 °C; the datasheet's junction-to-case thermal resistance is specified to the drain.
3 S passive Source of the N-channel MOSFET, with a continuous source-drain diode current IS of 4 A and pulsed diode forward current ISM of 21 A as stated in the body diode characteristics.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 4.2 A TC = 100 °C 1
Pulsed Drain Current IDM 18 A 1
Single Pulse Avalanche Energy EAS 325 mJ 1
Repetitive Avalanche Current IAR 4 A 1
Repetitive Avalanche Energy EAR 6 mJ 1
Maximum Power Dissipation PD 60 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 2.8 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Mounting Torque 10 lbf · in 6-32 or M3 screw 1
Mounting Torque 1.1 N · m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 65 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 2.1 °C/W 2
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2.5 4.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 3.9 S VDS = 50 V, ID = 3.1 A 2
Total Gate Charge Qg 48 nC ID = 3.2 A, VDS = 400 V, VGS = 10 V, see fig. 6 and 13b 2
Gate-Drain Charge Qgd 19 nC ID = 3.2 A, VDS = 400 V, VGS = 10 V, see fig. 6 and 13b 2
Continuous Source-Drain Diode Current IS 4 A MOSFET symbol showing the integral reverse p - n junction diode 2
Pulsed Diode Forward Current ISM 21 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 3.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 493 739 ns TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 2.1 3.2 µC TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: IRFBC30PBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfbc30pbf-vb-etched.step / irfbc30pbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfbc30pbf-vb.step / irfbc30pbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 5d178ec99c88bb22, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF