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IRFBC30APBF

Public Made by Adom

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Contents

README

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IRFBC30APBF

Vishay Intertech · MOSFETs · TO-220AB

IRFBC30APBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated at ±30 V (VGS), with VGS = 10 V used for the specified RDS(on) of 2.2 Ω.
2 D passive Drain of the N-channel MOSFET, rated for 600 V drain-source breakdown and 3.6 A continuous drain current at TC = 25 °C; the metal tab is also the drain (RthJC is specified to the drain).
3 S passive Source of the N-channel MOSFET; the integral body diode conducts from source to drain with a continuous source-drain current rating of 3.6 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 600 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 3.6 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 2.3 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 14 A 1
Linear Derating Factor 0.69 W/°C 1
Single Pulse Avalanche Energy EAS 290 mJ 1
Repetitive Avalanche Current IAR 3.6 A 1
Repetitive Avalanche Energy EAR 7.4 mJ 1
Maximum Power Dissipation PD 74 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 7 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Mounting Torque 1.1 N·m 6-32 or M3 screw 1
Drain-Source Breakdown Voltage VDS 600 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 600 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 2.2 Ω VGS = 10 V, ID = 2.2 A 2
Forward Transconductance gfs 2.1 S VDS = 50 V, ID = 2.2 A 2
Total Gate Charge Qg 23 nC VGS = 10 V, ID = 3.6 A, VDS = 480 V, see fig. 6 and 13b 2
Gate-Source Charge Qgs 5.4 nC VGS = 10 V, ID = 3.6 A, VDS = 480 V, see fig. 6 and 13b 2
Gate-Drain Charge Qgd 11 nC VGS = 10 V, ID = 3.6 A, VDS = 480 V, see fig. 6 and 13b 2
Continuous Source-Drain Diode Current IS 3.6 A 2
Pulsed Diode Forward Current ISM 14 A 2
Body Diode Voltage VSD 1.6 V TJ = 25 °C, IS = 3.6 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 400 600 ns TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 1.1 1.7 μC TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs 2
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1.7 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRFBC30APBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfbc30apbf-etched.step / irfbc30apbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfbc30apbf.step / irfbc30apbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 ac77c3e515ad37a0, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF