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IRFB7734PBF

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB7734PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7734PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and a gate threshold of 2.1 V to 3.7 V at ID = 250µA.
2 D passive Drain (also connected to the tab); VDSS of 75 V with continuous drain current of 183 A at TC = 25°C.
3 S passive Source; carries the continuous source (body diode) current up to 183 A and 650 A pulsed.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 75 V VGS = 0V, ID = 250µA 2
Gate Threshold Voltage VGS(th) 2.1 3.7 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 75 V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 75V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Static Drain-to-Source On-Resistance RDS(on) 2.8 3.5 mΩ VGS = 10V, ID = 100A 2
Forward Transconductance gfs 250 S VDS = 10V, ID = 100A 3
Continuous Source Current (Body Diode) IS 183 A 3
Pulsed Source Current (Body Diode) ISM 650 A 3
Diode Forward Voltage VSD 1.2 V TJ = 25°C, IS = 100A, VGS = 0V 3
Continuous Drain Current, TC = 25°C ID 183 A VGS @ 10V 2
Continuous Drain Current, TC = 100°C ID 130 A VGS @ 10V 2
Pulsed Drain Current IDM 650 A 2
Maximum Power Dissipation PD 290 W TC = 25°C 2
Linear Derating Factor 2 W/°C 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature 300 10 seconds, 1.6mm from case 2
Mounting Torque 10 lbf·in 6-32 or M3 screw 2
Single Pulse Avalanche Energy (Thermally limited) EAS 350 mJ 2
Single Pulse Avalanche Energy (Thermally limited) EAS 670 mJ 2
Junction-to-Case Thermal Resistance RJC 0.51 °C/W Junction-to-Case 2
Case-to-Sink Thermal Resistance RCS 0.5 °C/W Case-to-Sink, Flat Greased Surface (TO-220) 2
Junction-to-Ambient Thermal Resistance RJA 62 °C/W Junction-to-Ambient (TO-220) 2

CAD (KiCad official)

  • Symbol: IRFB7734PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb7734pbf-etched.step / irfb7734pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7734pbf.step / irfb7734pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 a3dfd19e9d5f00b8, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF