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Contents

README

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IRFB7545PBF

Infineon Technologies · MOSFETs · TO-220

IRFB7545PBF from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; the datasheet gives a maximum gate-to-source voltage of ±20 V (VGS).
2 D passive Drain terminal of the MOSFET; the datasheet rates drain-to-source breakdown voltage V(BR)DSS at 60 V minimum.
3 S passive Source terminal of the MOSFET; the datasheet rates continuous source current IS at 95 A and pulsed source current ISM at 380 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current, VGS @ 10V ID @ TC = 25°C 95 A VGS @ 10V 2
Continuous Drain Current, VGS @ 10V ID @ TC = 100°C 67 A VGS @ 10V 2
Pulsed Drain Current IDM 380 A 2
Maximum Power Dissipation PD @TC = 25°C 125 W 2
Linear Derating Factor 0.83 W/°C 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature, for 10 seconds (1.6mm from case) 300 for 10 seconds (1.6mm from case) 2
Mounting Torque, 6-32 or M3 Screw 10 lbf·in 6-32 or M3 Screw 2
Mounting Torque, 6-32 or M3 Screw 1.1 N·m 6-32 or M3 Screw 2
Single Pulse Avalanche Energy (Thermally limited) EAS 140 mJ 2
Single Pulse Avalanche Energy (Thermally limited) EAS 235 mJ 2
Junction-to-Case RθJC 1.21 °C/W 2
Junction-to-Ambient RθJA 62 °C/W 2
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 4.9 5.9 mΩ VGS = 10V, ID = 57A 2
Gate Threshold Voltage VGS(th) 2.1 3.7 V VDS = VGS, ID = 100µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 60V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 60V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 90 S VDS = 25V, ID = 57A 3
Total Gate Charge Qg 75 110 nC ID = 57A 3
Continuous Source Current (Body Diode) IS 95 A 3
Pulsed Source Current (Body Diode) ISM 380 A 3
Diode Forward Voltage VSD 1.2 V TJ = 25°C, IS = 57A, VGS = 0V 3
Junction-to-Sink, Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W Flat, Greased Surface 2

CAD (KiCad official)

  • Symbol: IRFB7545PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irfb7545pbf-etched.step / irfb7545pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7545pbf.step / irfb7545pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 b55e7ac245157b6e, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF