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IRFB7534PBF

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB7534PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7534PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the MOSFET channel, with VGS rated ±20 V maximum and threshold VGS(th) 2.1 V min to 3.7 V max at ID = 250µA.
2 D passive Drain; VDSS is 60 V, with continuous current of 232 A silicon limited and 195 A wire bond limited at TC = 25°C, and the drain is also connected to the tab.
3 S passive Source; carries the main current return path and the body diode continuous source current IS of 232 A maximum.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Gate Threshold Voltage VGS(th) 2.1 3.7 V VDS = VGS, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 2 2.4 mΩ VGS = 10V, ID = 100A 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 60 V, VGS = 0V 2
Drain-to-Source Leakage Current at TJ = 125°C IDSS 150 µA VDS = 60V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 498 S VDS = 10V, ID = 100A 3
Total Gate Charge Qg 186 279 nC ID = 100A 3
Diode Forward Voltage VSD 1.2 V TJ = 25°C, IS = 100A, VGS = 0V 3
Continuous Source Current (Body Diode) IS 232 A 3
Pulsed Source Current (Body Diode) ISM 944 A 3
Continuous Drain Current, TC = 25°C (Silicon Limited) ID 232 A VGS @ 10V (Silicon Limited) 2
Continuous Drain Current, TC = 100°C (Silicon Limited) ID 164 A VGS @ 10V (Silicon Limited) 2
Continuous Drain Current, TC = 25°C (Wire Bond Limited) ID 195 A VGS @ 10V (Wire Bond Limited) 2
Pulsed Drain Current IDM 944 A 2
Maximum Power Dissipation PD 294 W TC = 25°C 2
Linear Derating Factor 1.96 W/°C 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature 300 for 10 seconds (1.6mm from case) 2
Mounting Torque 10 lbf·in 6-32 or M3 Screw 2
Single Pulse Avalanche Energy (Thermally limited) EAS 373 mJ 2
Single Pulse Avalanche Energy (Thermally limited) EAS 775 mJ 2
Junction-to-Case RθJC 0.51 °C/W 2
Junction-to-Ambient (TO-220) RθJA 62 °C/W 2
Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRFB7534PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb7534pbf-etched.step / irfb7534pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7534pbf.step / irfb7534pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 05098eea3f0a03aa, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF