component

IRFB7446PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirfb7446pbffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
irfb7446pbf / README.md
History Download
Ray Publish 0.1.0 5f772d8 16d ago

IRFB7446PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7446PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; the gate-to-source voltage is rated at ±20 V (VGS, absolute maximum rating).
2 D passive Drain terminal, rated at VDSS 40 V with continuous ID of 123 A (silicon limited) or 120 A (package/bond-wire limited) at TC = 25°C.
3 S passive Source terminal; continuous body-diode source current IS is 120 A and pulsed ISM is 492 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current (Silicon Limited) ID @ TC = 25°C 123 A VGS @ 10V (Silicon Limited) 2
Continuous Drain Current (Silicon Limited) ID @ TC = 100°C 87 A VGS @ 10V (Silicon Limited) 2
Continuous Drain Current (Wire Bond Limited) ID @ TC = 25°C 120 A VGS @ 10V (Wire Bond Limited) 2
Pulsed Drain Current IDM 492 A 2
Maximum Power Dissipation PD @TC = 25°C 99 W TC = 25°C 2
Linear Derating Factor 0.66 W/°C 2
Gate-to-Source Voltage VGS -20 20 V Printed as ± 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature, for 10 seconds 300 1.6mm from case, 10 seconds 2
Mounting Torque, 6-32 or M3 Screw 10 lbf·in 6-32 or M3 screw 2
Mounting Torque, 6-32 or M3 Screw 1.1 N·m 6-32 or M3 screw 2
Single Pulse Avalanche Energy EAS 111 mJ 2
Single Pulse Avalanche Energy EAS (L=1mH) 236 mJ L = 1mH 2
Junction-to-Case RJC 1.52 °C/W 2
Junction-to-Ambient RJA 62 °C/W 2
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 2.6 3.3 mΩ VGS = 10V, ID = 70A 2
Gate Threshold Voltage VGS(th) 2.2 3 3.9 V VDS = VGS, ID = 100µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 40 V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 40V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 269 S VDS = 10V, ID = 70A 3
Total Gate Charge Qg 93 nC ID = 70A, VDS = 20V, VGS = 10V 3
Continuous Source Current (Body Diode) IS 120 A 3
Pulsed Source Current (Body Diode) ISM 492 A 3
Diode Forward Voltage VSD 0.9 1.3 V TJ = 25°C, IS = 70A, VGS = 0V 3
Case-to-Sink, Flat Greased Surface RCS 0.5 °C/W Flat, greased surface 2

CAD (KiCad official)

  • Symbol: IRFB7446PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb7446pbf-etched.step / irfb7446pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7446pbf.step / irfb7446pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 45f7ed5e648fd791, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF