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IRFB7440PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB7440PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7440PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; VGS is rated to ±20 V (absolute maximum) and is referenced to the Source.
2 D passive Drain terminal; the part is rated for VDSS of 40 V and continuous drain current of 172 A at TC = 25°C (120 A package-limited).
3 S passive Source terminal, the reference for VGS and the integral body diode; continuous source current is rated 172 A and pulsed 772 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250μA 2
Gate Threshold Voltage VGS(th) 2.2 3 3.9 V VDS = VGS, ID = 100μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS = 40V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 μA VDS = 40V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Static Drain-to-Source On-Resistance RDS(on) 2 2.5 mΩ VGS = 10V, ID = 100A 2
Forward Transconductance gfs 88 S VDS = 10V, ID = 100A 3
Total Gate Charge Qg 90 135 nC 3
Diode Forward Voltage VSD 0.9 1.3 V TJ = 25°C, IS = 100A, VGS = 0V 3
Continuous Source Current (Body Diode) IS 172 A 3
Pulsed Source Current (Body Diode) ISM 772 A 3
Continuous Drain Current, TC = 25°C ID 172 A VGS @ 10V 2
Continuous Drain Current, TC = 100°C ID 122 A VGS @ 10V 2
Continuous Drain Current, wire bond limited ID 120 A TC = 25°C, VGS @ 10V (wire bond limited) 2
Pulsed Drain Current IDM 772 A 2
Maximum Power Dissipation PD 143 W TC = 25°C 2
Linear Derating Factor 0.95 W/°C 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature, for 10 seconds 300 °C 1.6mm from case 2
Mounting torque 10 lbf in 6-32 or M3 screw 2
Single Pulse Avalanche Energy (Thermally limited) EAS 161 mJ 2
Single Pulse Avalanche Energy (Thermally limited) EAS 387 mJ 2
Junction-to-Case RθJC 1.05 °C/W 2
Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W 2
Junction-to-Ambient RθJA 62 °C/W 2

CAD (KiCad official)

  • Symbol: IRFB7440PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb7440pbf-etched.step / irfb7440pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7440pbf.step / irfb7440pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 6059d5bc105fac3e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF