component

IRFB7437PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirfb7437pbffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 28d ago
viewers irfb7437pbf: viewers · Ray 28d ago
irfb7437pbf-etched.glb irfb7437pbf: factory component page (tier=lcsc) · Ray 28d ago
irfb7437pbf-etched.step irfb7437pbf: factory component page (tier=lcsc) · Ray 28d ago
irfb7437pbf-hero.glb irfb7437pbf: hero GLB from the etched model (keeps the MPN mark) · Ray 28d ago
irfb7437pbf-hero.overlay.json Publish 0.1.0 · Ray 28d ago
irfb7437pbf.glb Publish 0.1.0 · Ray 28d ago
irfb7437pbf.kicad_mod Publish 0.1.0 · Ray 28d ago
irfb7437pbf.kicad_sym Publish 0.1.0 · Ray 28d ago
irfb7437pbf.lbr Publish 0.1.0 · Ray 28d ago
irfb7437pbf.step Publish 0.1.0 · Ray 28d ago
package.json Publish 0.1.0 · Ray 28d ago
page.json irfb7437pbf: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 24d ago
README.md irfb7437pbf: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 24d ago

IRFB7437PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7437PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the HEXFET; the absolute maximum gate-to-source voltage is ±20 V.
2 D passive Drain of the MOSFET, rated for VDSS 40 V with continuous ID of 250 A (silicon limited) and 195 A (package limited) at TC = 25°C.
3 S passive Source of the MOSFET; the body diode continuous source current is rated at 250 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current (Silicon Limited), TC=25°C ID 250 A VGS @ 10V (Silicon Limited) 2
Continuous Drain Current (Silicon Limited), TC=100°C ID 180 A VGS @ 10V (Silicon Limited) 2
Continuous Drain Current (Wire Bond Limited), TC=25°C ID 195 A VGS @ 10V (Wire Bond Limited) 2
Pulsed Drain Current IDM 1000 A 2
Maximum Power Dissipation PD 230 W TC = 25°C 2
Linear Derating Factor 1.5 W/°C 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature, for 10 seconds 300 °C 10 s, 1.6 mm from case 2
Mounting Torque 10 lbf in 6-32 or M3 screw 2
Mounting Torque 1.1 N m 6-32 or M3 screw 2
Single Pulse Avalanche Energy (Thermally limited), L=1mH EAS 802 mJ 2
Junction-to-Case Thermal Resistance RθJC 0.65 °C/W 2
Case-to-Sink Thermal Resistance, Flat Greased Surface RθCS 0.5 °C/W Flat, greased surface 2
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W 2
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 1.5 2 mΩ VGS = 10V, ID = 100A 2
Gate Threshold Voltage VGS(th) 2.2 3 3.9 V VDS = VGS, ID = 150μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS = 40V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 μA VDS = 40V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 160 S VDS = 10V, ID = 100A 3
Total Gate Charge Qg 150 225 nC ID = 100A, VDS = 20V, VGS = 10V 3
Continuous Source Current (Body Diode) IS 250 A 3
Pulsed Source Current (Body Diode) ISM 1000 A 3
Diode Forward Voltage VSD 1 1.3 V TJ = 25°C, IS = 100A, VGS = 0V 3

CAD (KiCad official)

  • Symbol: IRFB7437PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb7437pbf-etched.step / irfb7437pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7437pbf.step / irfb7437pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 c030fa46e3d44242, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF