component
IRFB7437PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irfb7437pbf: specified limits as data (metadata.characteristics, 27 rows from the datasheet)
2 files changed
+366−1
README.md+34@@ -21,6 +21,40 @@ IRFB7437PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Continuous Drain Current (Silicon Limited), TC=25°C | ID | | | 250 | A | VGS @ 10V (Silicon Limited) | 2 |+| Continuous Drain Current (Silicon Limited), TC=100°C | ID | | | 180 | A | VGS @ 10V (Silicon Limited) | 2 |+| Continuous Drain Current (Wire Bond Limited), TC=25°C | ID | | | 195 | A | VGS @ 10V (Wire Bond Limited) | 2 |+| Pulsed Drain Current | IDM | | | 1000 | A | | 2 |+| Maximum Power Dissipation | PD | | | 230 | W | TC = 25°C | 2 |+| Linear Derating Factor | | | | 1.5 | W/°C | | 2 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 2 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 2 |+| Soldering Temperature, for 10 seconds | | | | 300 | °C | 10 s, 1.6 mm from case | 2 |+| Mounting Torque | | | | 10 | lbf in | 6-32 or M3 screw | 2 |+| Mounting Torque | | | | 1.1 | N m | 6-32 or M3 screw | 2 |+| Single Pulse Avalanche Energy (Thermally limited), L=1mH | EAS | | | 802 | mJ | | 2 |+| Junction-to-Case Thermal Resistance | RθJC | | | 0.65 | °C/W | | 2 |+| Case-to-Sink Thermal Resistance, Flat Greased Surface | RθCS | | 0.5 | | °C/W | Flat, greased surface | 2 |+| Junction-to-Ambient Thermal Resistance | RθJA | | | 62 | °C/W | | 2 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | | | V | VGS = 0V, ID = 250μA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 1.5 | 2 | mΩ | VGS = 10V, ID = 100A | 2 |+| Gate Threshold Voltage | VGS(th) | 2.2 | 3 | 3.9 | V | VDS = VGS, ID = 150μA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS = 40V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 150 | μA | VDS = 40V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |+| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |+| Forward Transconductance | gfs | 160 | | | S | VDS = 10V, ID = 100A | 3 |+| Total Gate Charge | Qg | | 150 | 225 | nC | ID = 100A, VDS = 20V, VGS = 10V | 3 |+| Continuous Source Current (Body Diode) | IS | | | 250 | A | | 3 |+| Pulsed Source Current (Body Diode) | ISM | | | 1000 | A | | 3 |+| Diode Forward Voltage | VSD | | 1 | 1.3 | V | TJ = 25°C, IS = 100A, VGS = 0V | 3 |+ ## CAD (KiCad official) - Symbol: `IRFB7437PBF`
page.json+332−1@@ -149,6 +149,337 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c030fa46e3d44242",+ "rows": [+ {+ "name": "Continuous Drain Current (Silicon Limited), TC=25°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VGS @ 10V (Silicon Limited)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Silicon Limited), TC=100°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "VGS @ 10V (Silicon Limited)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Wire Bond Limited), TC=25°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 195,+ "conditions": "VGS @ 10V (Wire Bond Limited)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1000,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 230,+ "conditions": "TC = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Soldering Temperature, for 10 seconds",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "10 s, 1.6 mm from case",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Mounting Torque",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "lbf in",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "6-32 or M3 screw",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Mounting Torque",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "N m",+ "min": null,+ "typ": null,+ "max": 1.1,+ "conditions": "6-32 or M3 screw",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (Thermally limited), L=1mH",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 802,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Case Thermal Resistance",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.65,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Case-to-Sink Thermal Resistance, Flat Greased Surface",+ "symbol": "RθCS",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "Flat, greased surface",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 1.5,+ "max": 2,+ "conditions": "VGS = 10V, ID = 100A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.2,+ "typ": 3,+ "max": 3.9,+ "conditions": "VDS = VGS, ID = 150μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 40V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VDS = 40V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 160,+ "typ": null,+ "max": null,+ "conditions": "VDS = 10V, ID = 100A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 150,+ "max": 225,+ "conditions": "ID = 100A, VDS = 20V, VGS = 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1000,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1,+ "max": 1.3,+ "conditions": "TJ = 25°C, IS = 100A, VGS = 0V",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +521,4 @@ "visibility": { "public": true }-}+}