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IRFB7434PBF

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB7434PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7434PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits the gate-to-source voltage VGS to ±20 V.
2 D passive Drain terminal; continuous drain current is 317 A (silicon limited) and 195 A (wire-bond limited) at TC = 25°C, with VDSS of 40 V.
3 S passive Source terminal; continuous source current IS is 317 A and pulsed source current ISM is 1270 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain Current, continuous (Silicon Limited) ID 317 A TC = 25°C, VGS @ 10V (Silicon Limited) 2
Drain Current, continuous (Silicon Limited) ID 224 A TC = 100°C, VGS @ 10V (Silicon Limited) 2
Drain Current, continuous (Wire Bond Limited) ID 195 A TC = 25°C, VGS @ 10V (Wire Bond Limited) 2
Pulsed Drain Current IDM 1270 A 2
Maximum Power Dissipation PD 294 W TC = 25°C 2
Linear Derating Factor 1.96 W/°C 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature, for 10 seconds (1.6mm from case) 300 for 10 seconds (1.6mm from case) 2
Mounting Torque, 6-32 or M3 Screw 10 lbf·in 6-32 or M3 Screw 2
Mounting Torque, 6-32 or M3 Screw 1.1 N·m 6-32 or M3 Screw 2
Single Pulse Avalanche Energy (Thermally limited) EAS 490 mJ 2
Single Pulse Avalanche Energy (Thermally limited) EAS 1098 mJ 2
Junction-to-Case RθJC 0.51 °C/W 2
Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W Flat Greased Surface 2
Junction-to-Ambient RθJA 62 °C/W 2
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 1.25 1.6 mΩ VGS = 10V, ID = 100A 2
Gate Threshold Voltage VGS(th) 2.2 3 3.9 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 40 V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 40V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 211 S VDS = 10V, ID = 100A 3
Total Gate Charge Qg 216 324 nC ID = 100A 3
Continuous Source Current (Body Diode) IS 317 A 3
Pulsed Source Current (Body Diode) ISM 1270 A 3
Diode Forward Voltage VSD 0.9 1.3 V TJ = 25°C, IS = 100A, VGS = 0V 3

CAD (KiCad official)

  • Symbol: IRFB7434PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb7434pbf-etched.step / irfb7434pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7434pbf.step / irfb7434pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 34ae1276c46f0deb, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF