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IRFB7430PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB7430PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7430PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±20V maximum and a gate threshold of 2.2V to 3.9V.
2 D passive Drain (also connected to the tab); VDSS is 40V and continuous drain current is 195A package limited (409A silicon limited).
3 S passive Source; the body diode runs from source to drain, with continuous source current of 394A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 1 1.3 mΩ VGS = 10V, ID = 100A 2
Gate Threshold Voltage VGS(th) 2.2 3.9 V VDS = VGS, ID = 250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS = 40V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 μA VDS = 40V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 150 S VDS = 10V, ID = 100A 3
Total Gate Charge Qg 300 460 nC VGS = 10V, ID = 100A, VDS = 20V 3
Continuous Source Current (Body Diode) IS 394 A 3
Pulsed Source Current (Body Diode) ISM 1576 A 3
Diode Forward Voltage VSD 0.86 1.2 V TJ = 25°C, IS = 100A, VGS = 0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.014 V/°C Reference to 25°C, ID = 1.0mA 2
Continuous Drain Current, Silicon Limited (TC = 25°C) ID 409 A VGS @ 10V (Silicon Limited) 2
Continuous Drain Current, Silicon Limited (TC = 100°C) ID 289 A VGS @ 10V (Silicon Limited) 2
Continuous Drain Current, Wire Bond Limited (TC = 25°C) ID 195 A VGS @ 10V (Wire Bond Limited) 2
Pulsed Drain Current IDM 1524 A 2
Maximum Power Dissipation PD 375 W TC = 25°C 2
Linear Derating Factor 2.5 W/°C 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Junction Temperature Range TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 2
Single Pulse Avalanche Energy (thermally limited, L = 0.15mH) EAS 760 mJ 2
Single Pulse Avalanche Energy (thermally limited, L = 1mH) EAS 1452 mJ 2
Junction-to-Case RθJC 0.4 °C/W 2
Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W 2
Junction-to-Ambient RθJA 62 °C/W 2

CAD (KiCad official)

  • Symbol: IRFB7430PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb7430pbf-etched.step / irfb7430pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7430pbf.step / irfb7430pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 5a2d92bc395d41fd, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF