component

IRFB5620PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirfb5620pbffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
irfb5620pbf / README.md
History Download
Ray Publish 0.1.0 511572e 16d ago

IRFB5620PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB5620PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the absolute maximum gate-to-source voltage is VGS = ±20 V.
2 D passive Drain terminal of the N-channel MOSFET; the drain-to-source voltage is rated at VDS = 200 V (BVDSS minimum 200 V).
3 S passive Source terminal of the N-channel MOSFET; the integral body diode has a maximum forward voltage VSD of 1.3 V at IS = 15 A and VGS = 0 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-to-Source Voltage VGS -20 20 V 1
Drain-to-Source Voltage VDS 200 V 1
Continuous Drain Current ID 25 A ID @ TC = 25°C, VGS @ 10V 1
Continuous Drain Current ID 18 A ID @ TC = 100°C, VGS @ 10V 1
Pulsed Drain Current IDM 100 A Repetitive rating; pulse width limited by max. junction temperature 1
Power Dissipation PD 144 W TC = 25°C 1
Power Dissipation PD 72 W TC = 100°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbin 6-32 or M3 screw (printed as 1.1Nm) 1
Junction-to-Case Thermal Resistance RθJC 1.045 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W 1
Drain-to-Source Breakdown Voltage BVDSS 200 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 60 72.5 mΩ VGS = 10V, ID = 15A 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 100µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 200V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 200V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 37 S VDS = 50V, ID = 15A 2
Total Gate Charge Qg 25 38 nC VGS = 10V, ID = 15A 2
Internal Gate Resistance RG(int) 2.6 5 Ω 2
Continuous Source Current (Body Diode) IS 25 A TC = 25°C 2
Pulsed Source Current (Body Diode) ISM 100 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 15A, VGS = 0V 2
Reverse Recovery Time trr 98 147 ns TJ = 25°C, IF = 15A, VR = 160V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 491 737 nC TJ = 25°C, IF = 15A, VR = 160V, di/dt = 100A/µs 2
Case-to-Sink Thermal Resistance, Flat, Greased Surface RθCS 0.5 °C/W Flat, Greased Surface 1
Linear Derating Factor 0.96 W/°C 1

CAD (KiCad official)

  • Symbol: IRFB5620PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb5620pbf-etched.step / irfb5620pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb5620pbf.step / irfb5620pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (7 pp, sha256 321a3d779d5d6893, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF