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IRFB5615PBF

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Infineon Technologies MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB5615PBF

Infineon Technologies · MOSFETs · ITO-220AB-3

IRFB5615PBF from Infineon Technologies, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the MOSFET, with VGS limited to ±20 V max, VGS(th) 3.0 to 5.0 V and internal gate resistance typ. 2.7 Ω.
2 D passive Drain, also connected to the tab; VDS max 150 V, continuous ID 35 A at TC = 25°C, pulsed 140 A.
3 S passive Source; carries up to 35 A continuous at TC = 25°C, body diode forward voltage max 1.3 V at IS = 21 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package ITO-220AB-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 150 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID @ TC = 25°C 35 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V ID @ TC = 100°C 25 A TC = 100°C 1
Pulsed Drain Current IDM 140 A 1
Power Dissipation PD @TC = 25°C 144 W TC = 25°C 1
Power Dissipation PD @TC = 100°C 72 W TC = 100°C 1
Linear Derating Factor 0.96 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature, for 10 seconds 300 °C 1.6mm from case, 10 seconds 1
Mounting torque, 6-32 or M3 screw 1.1 Nm 10lbin (1.1Nm) 1
Junction-to-Case RθJC 1.045 °C/W 1
Junction-to-Ambient RθJA 62 °C/W 1
Breakdown Voltage (Drain-to-Source) BVDSS 150 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 32 39 mΩ VGS = 10V, ID = 21A 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 100µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 150V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 150V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 35 S VDS = 50V, ID = 21A 2
Total Gate Charge Qg 26 40 nC ID = 21A, VDS = 75V, VGS = 10V 2
Internal Gate Resistance RG(int) 2.7 5 Ω 2
Continuous Source Current (Body Diode) IS 35 A TC = 25°C 2
Pulsed Source Current (Body Diode) ISM 140 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 21A, VGS = 0V 2
Reverse Recovery Time trr 80 120 ns TJ = 25°C, IF = 21A, VR = 120V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 312 468 nC TJ = 25°C, IF = 21A, VR = 120V, di/dt = 100A/µs 2
Case-to-Sink, Flat, Greased Surface RθCS 0.5 °C/W 1

CAD (KiCad official)

  • Symbol: IRFB5615PBF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 67ef04a5086b705b, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF