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IRFB4610PBF

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB4610PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB4610PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel HEXFET; gate-to-source voltage is rated ±20 V (VGS).
2 D passive Drain terminal of the 100 V N-channel HEXFET, rated for 73 A continuous drain current at TC = 25°C.
3 S passive Source terminal of the MOSFET; the integral body diode runs source to drain with a continuous source current rating of 73 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250uA 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 100uA 2
Static Drain-to-Source On-Resistance RDS(on) 11 14 mOhm VGS = 10V, ID = 44A 2
Drain-to-Source Leakage Current IDSS 20 uA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current (TJ=125C) IDSS 250 uA VDS = 100V, VGS = 0V, TJ = 125C 2
Gate-to-Source Forward Leakage IGSS 200 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -200 nA VGS = -20V 2
Forward Transconductance gfs 73 S VDS = 50V, ID = 44A 2
Diode Forward Voltage VSD 1.3 V TJ = 25C, IS = 44A, VGS = 0V 2
Continuous Source Current (Body Diode) IS 73 A MOSFET symbol showing integral reverse p-n junction diode 2
Pulsed Source Current (Body Diode) ISM 290 A 2
Reverse Recovery Time trr 35 53 ns TJ = 25C, VR = 85V, IF = 44A 2
Reverse Recovery Time (TJ=125C) trr 42 63 ns TJ = 125C, VR = 85V, IF = 44A 2
Reverse Recovery Charge Qrr 44 66 nC TJ = 25C, di/dt = 100A/us 2
Reverse Recovery Charge (TJ=125C) Qrr 65 98 nC TJ = 125C, di/dt = 100A/us 2
Total Gate Charge Qg 90 140 nC ID = 44A, VDS = 80V, VGS = 10V 2
Gate-to-Source Charge Qgs 20 nC ID = 44A, VDS = 80V, VGS = 10V 2
Gate-to-Drain (Miller) Charge Qgd 36 nC ID = 44A, VDS = 80V, VGS = 10V 2
Turn-On Delay Time td(on) 18 ns ID = 44A, RG = 5.6 ohm, VGS = 10V, VDD = 65V 2
Rise Time tr 87 ns ID = 44A, RG = 5.6 ohm, VGS = 10V, VDD = 65V 2
Turn-Off Delay Time td(off) 53 ns ID = 44A, RG = 5.6 ohm, VGS = 10V, VDD = 65V 2
Fall Time tf 70 ns ID = 44A, RG = 5.6 ohm, VGS = 10V, VDD = 65V 2
Input Capacitance Ciss 3550 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 260 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 150 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Effective Output Capacitance (Energy Related) Coss eff. (ER) 330 pF VGS = 0V, VDS = 0V to 80V, See Fig. 11 2
Effective Output Capacitance (Time Related) Coss eff. (TR) 380 pF VGS = 0V, VDS = 0V to 80V, See Fig. 5 2
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.085 V/°C Reference to 25C, ID = 1mA 2
Gate Input Resistance RG 1.5 Ohm f = 1MHz, open drain 2
Reverse Recovery Current IRRM 2.1 A TJ = 25C 2
Continuous Drain Current (TC=25C) ID 73 A TC = 25C, VGS @ 10V 1
Continuous Drain Current (TC=100C) ID 52 A TC = 100C, VGS @ 10V 1
Pulsed Drain Current IDM 290 A Repetitive rating; pulse width limited by max. junction temperature 1
Maximum Power Dissipation PD 190 W TC = 25C 1
Linear Derating Factor 1.3 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature, for 10 seconds 300 °C 1.6mm from case, 10 seconds 1
Mounting Torque 10 lbin 6-32 or M3 screw (1.1 Nm) 1
Single Pulse Avalanche Energy (Thermally limited) EAS 370 mJ Starting TJ = 25C, L = 0.39mH, RG = 25 ohm, IAS = 44A, VGS = 10V 1
Junction-to-Case RθJC 0.77 °C/W 1
Case-to-Sink, Flat Greased Surface, TO-220 RθCS 0.5 °C/W 1
Junction-to-Ambient, TO-220 RθJA 62 °C/W 1

CAD (KiCad official)

  • Symbol: IRFB4610PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb4610pbf-etched.step / irfb4610pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb4610pbf.step / irfb4610pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 3c56daa544b01b32, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF